Evaporation characteristics of TeO2 in the formation of tellurium oxide thin films

1986 ◽  
Vol 21 (1) ◽  
pp. 246-250 ◽  
Author(s):  
N. Lakshminarayan ◽  
M. Radhakrishnan ◽  
C. Balasubramanian
Keyword(s):  
Thin Films ◽  
Oxide Thin Films ◽  
Tellurium Oxide

Ammonia sensitivity of rf sputtered tellurium oxide thin films

2009 ◽  
Vol 138 (2) ◽  
pp. 550-555 ◽  
Author(s):  
T. Siciliano ◽  
M. Di Giulio ◽  
M. Tepore ◽  
E. Filippo ◽  
G. Micocci ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxide Thin Films ◽  
Tellurium Oxide

Structure and optical parameters of Eu doped tellurium oxide thin films prepared by reactive magnetron sputtering method

2019 ◽  
Vol 691 ◽  
pp. 137592 ◽  
Author(s):  
Marcin Łapiński ◽  
Michalina Walas ◽  
Anna Gapska ◽  
Dorota Kulik ◽  
Aneta Szmytke ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Optical Parameters ◽  
Reactive Magnetron ◽  
Oxide Thin Films ◽  
Tellurium Oxide

Dielectric studies on tellurium oxide thin films

1982 ◽  
Vol 17 (6) ◽  
pp. 1623-1626 ◽  
Author(s):  
N. Lakshminarayan ◽  
M. Radhakrishnan ◽  
C. Balasubramanian
Keyword(s):  
Thin Films ◽  
Dielectric Studies ◽  
Oxide Thin Films ◽  
Tellurium Oxide

scholarly journals Effect of O2/Ar Gas Ratios on the Characteristics of Amorphous Tellurium Oxide Thin Films

2017 ◽  
Vol 30 (5) ◽  
pp. 294-300
Author(s):  
Heon Kong ◽  
Gun-Hong Jung ◽  
Jong-Bin Yeo ◽  
Hyun-Yong Lee
Keyword(s):  
Thin Films ◽  
Oxide Thin Films ◽  
Tellurium Oxide ◽  
Ar Gas

Optical waveguiding in amorphous tellurium oxide thin films

2003 ◽  
Vol 445 (1) ◽  
pp. 118-126 ◽  
Author(s):  
Ranu Nayak ◽  
Vinay Gupta ◽  
A.L Dawar ◽  
K Sreenivas
Keyword(s):  
Thin Films ◽  
Oxide Thin Films ◽  
Tellurium Oxide ◽  
Optical Waveguiding

scholarly journals Stoichiometric low loss Tellurium Oxide thin films for photonic applications

2008 ◽  
Author(s):  
Khu T. Vu ◽  
Steve J. Madden ◽  
Barry Luther-Davies ◽  
Douglas Bulla
Keyword(s):  
Thin Films ◽  
Oxide Thin Films ◽  
Low Loss ◽  
Tellurium Oxide

A Study on the properties of tellurium-oxide thin films based on the variable sputtering gas ratio

2015 ◽  
Vol 66 (11) ◽  
pp. 1744-1749 ◽  
Author(s):  
Heon Kong ◽  
Jong-Bin Yeo ◽  
Hyun-Yong Lee
Keyword(s):  
Thin Films ◽  
Oxide Thin Films ◽  
Tellurium Oxide ◽  
Gas Ratio

Effects of dopant concentration on the microstructure of tin- doped indium oxide thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 716-717
Author(s):  
I. A. Rauf
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Ionic Radius ◽  
Free Carrier ◽  
Electron Gun ◽  
Periodic Lattice ◽  
Oxide Thin Films ◽  
Transmission Electron ◽  
The Difference ◽  
Dopant Atoms

To understand the electronic conduction mechanism in Sn-doped indium oxide thin films, it is important to study the effect of dopant atoms on the neighbouring indium oxide lattice. Ideally Sn is a substitutional dopant at random indium sites. The difference in valence (Sn4+ replaces In3+) requires that an extra electron is donated to the lattice and thus contributes to the free carrier density. But since Sn is an adjacent member of the same row in the periodic table, the difference in the ionic radius (In3+: 0.218 nm; Sn4+: 0.205 nm) will introduce a strain in the indium oxide lattice. Free carrier electron waves will no longer see a perfect periodic lattice and will be scattered, resulting in the reduction of free carrier mobility, which will lower the electrical conductivity (an undesirable effect in most applications).One of the main objectives of the present investigation is to understand the effects of the strain (produced by difference in the ionic radius) on the microstructure of the indium oxide lattice when the doping level is increased to give high carrier densities. Sn-doped indium oxide thin films were prepared with four different concentrations: 9, 10, 11 and 12 mol. % of SnO2 in the starting material. All the samples were prepared at an oxygen partial pressure of 0.067 Pa and a substrate temperature of 250°C using an Edwards 306 coating unit with an electron gun attachment for heating the crucible. These deposition conditions have been found to give optimum electrical properties in Sn-doped indium oxide films. A JEOL 2000EX transmission electron microscope was used to investigate the specimen microstructure.

The growth of manganese oxide thin films by spray pyrolysis technique

2012 ◽  
Vol 1 (2) ◽  
pp. 159-161
Author(s):  
M.Sudha M.Sudha ◽  
◽  
P.Duraisamy P.Duraisamy
Keyword(s):  
Thin Films ◽  
Manganese Oxide ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Oxide Thin Films
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