Scaling limit of anticommuting self-adjoint operators and applications to Dirac operators

1995 ◽  
Vol 21 (2) ◽  
pp. 139-173 ◽  
Author(s):  
Asao Arai
Keyword(s):  
Scaling Limit ◽  
Dirac Operators ◽  
Adjoint Operators

scholarly journals NON-RELATIVISTIC LIMIT OF A DIRAC–MAXWELL OPERATOR IN RELATIVISTIC QUANTUM ELECTRODYNAMICS

2003 ◽  
Vol 15 (03) ◽  
pp. 245-270 ◽  
Author(s):  
ASAO ARAI
Keyword(s):  
Quantum Electrodynamics ◽  
Relativistic Quantum ◽  
Scaling Limit ◽  
Relativistic Limit ◽  
Maxwell Operator ◽  
Adjoint Extension ◽  
General Limit ◽  
Adjoint Operators ◽  
Abstract Framework ◽  
General Limit Theorem

The non-relativistic (scaling) limit of a particle-field Hamiltonian H, called a Dirac–Maxwell operator, in relativistic quantum electrodynamics is considered. It is proven that the non-relativistic limit of H yields a self-adjoint extension of the Pauli–Fierz Hamiltonian with spin 1/2 in non-relativistic quantum electrodynamics. This is done by establishing in an abstract framework a general limit theorem on a family of self-adjoint operators partially formed out of strongly anticommuting self-adjoint operators and then by applying it to H.

Improvement in Gate Dielectric Quality of Ultra Thin a: SiN:H MNS Capacitor by Hydrogen Etching of the Substrate

2002 ◽  
Vol 716 ◽  
Author(s):  
Parag C. Waghmare ◽  
Samadhan B. Patil ◽  
Rajiv O. Dusane ◽  
V.Ramgopal Rao
Keyword(s):  
Silicon Nitride ◽  
Gate Dielectric ◽  
Substrate Surface ◽  
Scaling Limit ◽  
Tunneling Current ◽  
Chemical Vapor ◽  
Poor Performance ◽  
State Density ◽  
Direct Tunneling Current

AbstractTo extend the scaling limit of thermal SiO2, in the ultra thin regime when the direct tunneling current becomes significant, members of our group embarked on a program to explore the potential of silicon nitride as an alternative gate dielectric. Silicon nitride can be deposited using several CVD methods and its properties significantly depend on the method of deposition. Although these CVD methods can give good physical properties, the electrical properties of devices made with CVD silicon nitride show very poor performance related to very poor interface, poor stability, presence of large quantity of bulk traps and high gate leakage current. We have employed the rather newly developed Hot Wire Chemical Vapor Deposition (HWCVD) technique to develop the a:SiN:H material. From the results of large number of optimization experiments we propose the atomic hydrogen of the substrate surface prior to deposition to improve the quality of gate dielectric. Our preliminary results of these efforts show a five times improvement in the fixed charges and interface state density.

scholarly journals Hardy-type estimates for Dirac operators

2007 ◽  
Vol 40 (6) ◽  
pp. 885-900 ◽  
Author(s):  
J DOLBEAULT ◽  
M ESTEBAN ◽  
J DUOANDIKOETXEA ◽  
L VEGA
Keyword(s):  
Dirac Operators ◽  
Hardy Type

scholarly journals Chiral symmetry and taste symmetry from the eigenvalue spectrum of staggered Dirac operators

2021 ◽  
Vol 104 (1) ◽  
Author(s):  
Hwancheol Jeong ◽  
Chulwoo Jung ◽  
Seungyeob Jwa ◽  
Jangho Kim ◽  
Jeehun Kim ◽  
...  
Keyword(s):  
Chiral Symmetry ◽  
Dirac Operators ◽  
Eigenvalue Spectrum
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