Radiation losses of a theta pinch plasma in the wave-length range 10–200 Å

1971 ◽  
Vol 244 (1) ◽  
pp. 70-85 ◽  
Author(s):  
Wolfgang Engelhardt
2003 ◽  
Author(s):  
P.D. Pedrow ◽  
A.M. Nasiruddin ◽  
R. Mahalingam ◽  
V.M. Desai

2014 ◽  
Vol 42 (5) ◽  
pp. 1163-1172 ◽  
Author(s):  
Gregor Loisch ◽  
Ge Xu ◽  
Konstantin Cistakov ◽  
Andreas Fedjuschenko ◽  
Marcus Iberler ◽  
...  

Nature ◽  
1963 ◽  
Vol 200 (4913) ◽  
pp. 1303-1304 ◽  
Author(s):  
B. C. FAWCETT ◽  
A. H. GABRIEL ◽  
W. G. GRIFFIN ◽  
B. B. JONES ◽  
R. WILSON
Keyword(s):  

1966 ◽  
Vol 16 (24) ◽  
pp. 1082-1085 ◽  
Author(s):  
B. Kronast ◽  
H. Röhr ◽  
E. Glock ◽  
H. Zwicker ◽  
E. Fünfer

1952 ◽  
Vol 116 ◽  
pp. 433 ◽  
Author(s):  
A. W. Petrie ◽  
R. Small
Keyword(s):  

1968 ◽  
Vol 25 (2) ◽  
pp. 650-650 ◽  
Author(s):  
Kazuo Yokoyama ◽  
Kunihiko Nagai ◽  
Yasuyuki Nogi ◽  
Tetsu Miyamoto ◽  
Hisamitsu Yoshimura

1987 ◽  
Vol 102 ◽  
Author(s):  
R. D. Feldman ◽  
R. F. Austin ◽  
P. M. Bridenbaugh

ABSTRACTFilms of HgCdTe with x < 0.6 and of HgZnTe with x < 0.26 have been grown by molecular beam epitaxy (MBE). Very high electron mobilities have been achieved for both materials in the small bandgap region. Hall mobilities at 77K reach 4.8 × 105 cm2 /V-s for Hg0 87 Zn0.13 Te, and 3.1 × 105 cm2/V-s for Hg0.87 Zn0.13 Te. HgCdTe growth was easily extended to the 1.5 – 3 μm wave length range. Attempts to extend HgZnTe to these bandgaps were unsuccessful due to defects that are induced by surface roughness in high Zn-content films. These results suggest that HgCdTe is the more suitable material for MBE growth for near infrared applications.


2011 ◽  
Vol 415 (1) ◽  
pp. S993-S995 ◽  
Author(s):  
S. Jung ◽  
V. Surla ◽  
T.K. Gray ◽  
D. Andruczyk ◽  
D.N. Ruzic
Keyword(s):  

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