NITROGEN LATTICE LOCATION IN MOVPE GROWN Ga1-xInxNyAs1-y FILMS USING ION BEAM CHANNELING

We have investigated the nitrogen lattice location in MOVPE grown Ga 1- x In x N y As 1- y with x = 0.07 and y = 0.025 by means of ion beam channeling technique. In this system, the lattice constant of the Ga 1- x In x N y As 1- y film is equal to GaAs lattice. Therefore, we can grow apparently no strain, high quality and very thick GaInNAs film on GaAs substrate. The quality of the films as well as the lattice location of In and N were characterized by channeling Rutherford backscattering spectrometry and nuclear reaction analysis using 3.95 MeV He 2+ beam. The fraction of substitutional nitrogen in the film was measured using the 14 N (α, p )17 O endothermic nuclear reaction. Our results indicate that more than 90% of In and N atoms are located the substitutional site, however, N atoms are slightly displaced by ~0.2 Å from the lattice site. We suggest that the GaInNAs film has a local strain or point defects around the N atoms.

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Lattice location of O 18 in ion implanted Fe crystals by Rutherford backscattering spectrometry, channeling and nuclear reaction analysis

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2016.06.009 ◽

2016 ◽

Vol 383 ◽

pp. 47-51 ◽

Cited By ~ 3

Author(s):

Mathayan Vairavel ◽

Balakrishnan Sundaravel ◽

Binaykumar Panigrahi

Keyword(s):

Nuclear Reaction ◽

Rutherford Backscattering Spectrometry ◽

Rutherford Backscattering ◽

Lattice Location ◽

Nuclear Reaction Analysis ◽

O 18 ◽

Ion Implanted

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Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.287 ◽

2005 ◽

Vol 483-485 ◽

pp. 287-290

Author(s):

H. Colder ◽

M. Morales ◽

Richard Rizk ◽

I. Vickridge

Keyword(s):

Nuclear Reaction ◽

Hydrogen Content ◽

Rutherford Backscattering Spectrometry ◽

Ion Beam ◽

Nuclear Reaction Analysis ◽

Elastic Recoil ◽

Crystalline Fraction ◽

Elastic Recoil Detection ◽

Beam Analysis

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

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Lattice Location of Ta in Ni3Ai by Ion Channeling and Nuclear Reaction Analysis

MRS Proceedings ◽

10.1557/proc-81-165 ◽

1986 ◽

Vol 81 ◽

Cited By ~ 2

Author(s):

H. Lin ◽

L. E. Sehberling ◽

P. F. Lyman ◽

D. P. Pope

Keyword(s):

Nuclear Reaction ◽

Ternary Phase Diagram ◽

Liquid Scintillator ◽

Ion Beam ◽

Lattice Location ◽

Nuclear Reaction Analysis ◽

Surface Barrier ◽

Crystallographic Axis ◽

Ion Channeling ◽

Barrier Detector

AbstractWe have investigated the lattice location of Ta in Ni3Al using Rutherford backscattering with channeling, and nuclear reaction analysis. An 8 MeV 4He ion beam was directed along the < 100> crystallographic axis of the Ni75Al24Ta single crystal. A silicon surface barrier detector was used to analyze 4He ions backscattered from Ni and Ta atoms. Neutrons generated from Al by the 27Al(4He,n)30P reaction were detected by a large volume liquid scintillator placed outside of the scattering chamber. Essentially all of the Ta atoms were found to be substitutional, as determined by the Ta channeling minimum yield. A comparison of the width of the channeling angular scan for Al, Ni and Ta indicated that the Ta atoms are predominantly distributed on the Ni sites. This result is in conflict with expectations based on the ternary phase diagram.

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Lattice Site of Helium Implanted in Si and Diamond

MRS Proceedings ◽

10.1557/proc-279-433 ◽

1992 ◽

Vol 279 ◽

Cited By ~ 2

Author(s):

William R. Allen

Keyword(s):

Nuclear Reaction ◽

Single Crystals ◽

Lattice Site ◽

Rutherford Backscattering Spectrometry ◽

Angular Distributions ◽

Nuclear Reaction Analysis ◽

Major Fraction ◽

Random Lattice ◽

Tetrahedral Interstice ◽

Ion Channeling

ABSTRACTSingle crystals of silicon and diamond were implanted at 300K with 70 keV 3He. Ion channeling analyses were executed by application of Rutherford backscattering spectrometry and nuclear reaction analysis. Helium exhibits a non-random lattice site in the channeling angular distributions for silicon and diamond. A major fraction of the implanted 3He was qualitatively identified to be near to the tetrahedral interstice in both materials.

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Lattice site location of ultra-shallow implanted B in Si using ion beam analysis

MRS Proceedings ◽

10.1557/proc-669-j5.3 ◽

2001 ◽

Vol 669 ◽

Cited By ~ 8

Author(s):

Hajime Kobayashi ◽

Ichiro Nomachi ◽

Susumu Kusanagi ◽

Fumitaka Nishiyama

Keyword(s):

Ion Implantation ◽

Lattice Site ◽

Rutherford Backscattering Spectrometry ◽

Hole Concentration ◽

Ion Beam ◽

Nuclear Reaction Analysis ◽

High Dose ◽

Site Location ◽

Ion Channeling ◽

Implantation Damage

ABSTRACTWe have investigated the lattice site location of B in Si using ion channeling in combination with nuclear reaction analysis (NRA). Silicon samples implanted with Boron at an energy of 10 keV and a dose of 5 × 1014 cm−2 (low dose samples) or 5 × 1015 cm−2 (high dose samples) were annealed at 1000 °C for 10 seconds (RTA) or at 800 °C for 10 minutes (FA). The activation efficiencies of these samples were estimated from the B atomic concentration and the hole concentration obtained by secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP), respectively. We also studied the ion implantation damage of Si crystals using ion channeling combined with Rutherford backscattering spectrometry (RBS). We found that the activation efficiency is proportional to the substitutionality, meaning that substitutional B is fully activated without any carrier compensation. We also found that B atoms go to the substitutional sites and are activated up to the solubility limit in the high dose samples. However, the ion implantation damage of the crystalline Si in the high dose samples increases somewhat after annealing.

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A New High-Throughput Focused MeV Ion-Beam Analysis Setup

Instruments ◽

10.3390/instruments5010010 ◽

2021 ◽

Vol 5 (1) ◽

pp. 10

Author(s):

Sören Möller ◽

Daniel Höschen ◽

Sina Kurth ◽

Gerwin Esser ◽

Albert Hiller ◽

...

Keyword(s):

Gamma Ray ◽

Rutherford Backscattering Spectrometry ◽

Ion Beam ◽

Complete Analysis ◽

Nuclear Reaction Analysis ◽

Beam Optics ◽

Single Measurement ◽

Ion Beam Analysis ◽

Beam Analysis ◽

Technical Solutions

The analysis of material composition by ion-beam analysis (IBA) is becoming a standard method, similar to electron microscopy. A pool of IBA methods exists, from which the combination of particle-induced-X-ray emission (PIXE), particle induced gamma-ray analysis (PIGE), nuclear-reaction-analysis (NRA), and Rutherford-backscattering-spectrometry (RBS) provides the most complete analysis over the whole periodic table in a single measurement. Yet, for a highly resolved and accurate IBA analysis, a sophisticated technical setup is required integrating the detectors, beam optics, and sample arrangement. A new end-station developed and installed in Forschungszentrum Jülich provides these capabilities in combination with high sample throughput and result accuracy. Mechanical tolerances limit the device accuracy to 3% for RBS. Continuous pumping enables 5*10−8 mbar base pressure with vibration amplitudes < 0.1 µm. The beam optics achieves a demagnification of 24–34, suitable for µ-beam analysis. An in-vacuum manipulator enables scanning 50 × 50 mm² sample areas with 10 nm accuracy. The setup features the above-mentioned IBA detectors, enabling a broad range of analysis applications such as the operando analysis of batteries or the post-mortem analysis of plasma-exposed samples with up to 3000 discrete points per day. Custom apertures and energy resolutions down to 11 keV enable separation of Fe and Cr in RBS. This work presents the technical solutions together with the quantification of these challenges and their success in the form of a technical reference.

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In-Situ Ion Beam Measurements of Deuterium Loading in Thin Foil Electrochemical Cells

MRS Proceedings ◽

10.1557/proc-157-317 ◽

1989 ◽

Vol 157 ◽

Cited By ~ 1

Author(s):

J.A. Knapp ◽

T.R. Guilinger ◽

M.J. Kelly ◽

D. Walsh ◽

B.L. Doyle

Keyword(s):

Nuclear Reaction ◽

Ion Beam ◽

Cold Fusion ◽

Thin Foil ◽

Nuclear Reaction Analysis ◽

Deuterium Content ◽

Electrochemical Cells ◽

External Beam

ABSTRACTA key element of recent assertions of "cold fusion" has been the claim that electrochemical loading of deuterium into Pd electrodes can produce D:Pd levels exceeding 1:1. Using external beam nuclear reaction analysis of Pd foil electrodes in operating electrochemical cells, we have directly monitored deuterium content in-situ. No conditions were found which resulted in loadings higher than ∼0.9.

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