scholarly journals Errata: Direct evidence for boron segregation to grain boundaries in a nickel-base alloy by secondary ion mass spectrometry

1975 ◽  
Vol 6 (4) ◽  
pp. 950-950 ◽  
Author(s):  
J. M. Walsh ◽  
B. H. Rear
Keyword(s):  
Mass Spectrometry ◽  
Grain Boundaries ◽  
Direct Evidence ◽  
Secondary Ion Mass Spectrometry ◽  
Base Alloy ◽  
Nickel Base Alloy ◽  
Boron Segregation ◽  
Ion Mass Spectrometry ◽  
Nickel Base ◽  
Secondary Ion

The Effects of PtxSi Growth on the Redistribution of P-Type Dopants in Silicon

1982 ◽  
Vol 18 ◽  
Author(s):  
C. Y. Wei ◽  
W. Katz ◽  
G. Smith
Keyword(s):  
Mass Spectrometry ◽  
Grain Boundaries ◽  
Annealing Time ◽  
Secondary Ion Mass Spectrometry ◽  
Silicide Formation ◽  
Defect Sites ◽  
Ion Mass Spectrometry ◽  
P Type ◽  
Secondary Ion

The redistribution of p-type dopants (boron and indium) during PtxSi growth was studied as a function of annealing time using secondary ion mass spectrometry. It was found that both boron and indium atoms redistribute into the silicide during a thermal anneal. Initially, the dopant becomes trapped at the PtxSi–Si interface and concomitantly getters to defect sites located at the moving Pt-PtxSi interface. Even after silicide formation is complete, the dopant continues to out-diffuse to the surface via an enhanced mechanism due to defects and/or grain boundaries. Finally, no evidence for a “snowplow” effect was observed for either boron or indium at the implant dose of 2 × 1013 ions cm−2.

An Explanation for the Environmental Sensitivity of Ni3Al

1998 ◽  
Vol 552 ◽  
Author(s):  
D. B. Lillig ◽  
D. Legzdina ◽  
I. M. Robertson ◽  
H. K. Birnbaum
Keyword(s):  
Mass Spectrometry ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Secondary Ion Mass Spectrometry ◽  
Environmental Sensitivity ◽  
Boron Segregation ◽  
Boron Doped ◽  
Distribution Of Elements ◽  
Free Material ◽  
Secondary Ion

ABSTRACTSecondary Ion Mass Spectrometry has been used to study the distribution of elements in and near grain boundaries in boron-free and boron-doped Ni76Al24 alloys with and without ∼220 wt. ppm of deuterium. In boron-free alloys, sulfur was distributed about the grain boundaries in both deuterium- free and deuterium-charged samples. The distribution of deuterium followed that of sulfur and was segregated to grain boundaries. In the boron-doped material, sulfur was not found at most grain boundaries in the uncharged material, but was in the charged material. No deuterium was found at the grain boundaries in the boron-doped material. It is proposed that in the boron-free material it is the synergistic effect of sulfur and hydrogen that is responsible for the environmental sensitivity of this alloy. In boron-doped material, boron segregation to the grain boundary prevents sulfur, and to some extent hydrogen, segregating to the grain boundary.

Applications of Time-OF-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)

1990 ◽  
Vol 48 (2) ◽  
pp. 308-309
Author(s):  
Bruno Schueler ◽  
Robert W. Odom
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Structural Information ◽  
Time Of Flight ◽  
Biological Tissues ◽  
Polymer Surfaces ◽  
Tof Sims ◽  
Secondary Ions ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) provides unique capabilities for elemental and molecular compositional analysis of a wide variety of surfaces. This relatively new technique is finding increasing applications in analyses concerned with determining the chemical composition of various polymer surfaces, identifying the composition of organic and inorganic residues on surfaces and the localization of molecular or structurally significant secondary ions signals from biological tissues. TOF-SIMS analyses are typically performed under low primary ion dose (static SIMS) conditions and hence the secondary ions formed often contain significant structural information.This paper will present an overview of current TOF-SIMS instrumentation with particular emphasis on the stigmatic imaging ion microscope developed in the authors’ laboratory. This discussion will be followed by a presentation of several useful applications of the technique for the characterization of polymer surfaces and biological tissues specimens. Particular attention in these applications will focus on how the analytical problem impacts the performance requirements of the mass spectrometer and vice-versa.

Optics-Free Visualization of Proteins in Single Cells by Time of Flight-Secondary Ion Mass Spectrometry Coupled with Genetically Encoded Chemical Tags

2020 ◽  
Author(s):  
Feifei Jia ◽  
Jie Wang ◽  
Yanyan Zhang ◽  
Qun Luo ◽  
Luyu Qi ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Single Cells ◽  
Time Of Flight ◽  
E Coli ◽  
Tof Sims ◽  
Ion Mass Spectrometry ◽  
Chemical Tags ◽  
Secondary Ion

<p></p><p><i>In situ</i> visualization of proteins of interest at single cell level is attractive in cell biology, molecular biology and biomedicine, which usually involves photon, electron or X-ray based imaging methods. Herein, we report an optics-free strategy that images a specific protein in single cells by time of flight-secondary ion mass spectrometry (ToF-SIMS) following genetic incorporation of fluorine-containing unnatural amino acids as a chemical tag into the protein via genetic code expansion technique. The method was developed and validated by imaging GFP in E. coli and human HeLa cancer cells, and then utilized to visualize the distribution of chemotaxis protein CheA in E. coli cells and the interaction between high mobility group box 1 protein and cisplatin damaged DNA in HeLa cells. The present work highlights the power of ToF-SIMS imaging combined with genetically encoded chemical tags for <i>in situ </i>visualization of proteins of interest as well as the interactions between proteins and drugs or drug damaged DNA in single cells.</p><p></p>

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