Quasi-two-dimensional subthreshold current model of deep submicrometer SOI drive-in gate controlled hybrid transistors with lateral non-uniform doping profile

2001 ◽  
Vol 44 (1) ◽  
pp. 60-67 ◽  
Author(s):  
Ru Huang ◽  
Weihai Bu ◽  
Xing Zhang ◽  
Yangyuan Wang
Keyword(s):  
Current Model ◽  
Doping Profile ◽  
Two Dimensional ◽  
Subthreshold Current ◽  
Deep Submicrometer ◽  
Uniform Doping

A two-dimensional subthreshold current model for strained-Si MOSFET

2011 ◽  
Vol 54 (12) ◽  
pp. 2181-2185 ◽  
Author(s):  
ShanShan Qin ◽  
HeMing Zhang ◽  
HuiYong Hu ◽  
GuanYu Wang ◽  
XiaoYan Wang ◽  
...  
Keyword(s):  
Current Model ◽  
Two Dimensional ◽  
Strained Si ◽  
Subthreshold Current

scholarly journals A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET

2011 ◽  
Vol 60 (5) ◽  
pp. 058501
Author(s):  
Qin Shan-Shan ◽  
Zhang He-Ming ◽  
Hu Hui-Yong ◽  
Qu Jiang-Tao ◽  
Wang Guan-Yu ◽  
...  
Keyword(s):  
Current Model ◽  
Two Dimensional ◽  
Soi Mosfet ◽  
Subthreshold Current
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