Subthreshold Current Modeling of Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA) Junctioless MOSFET For Low Power Applications

Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA) Junctioless MOSFET has been explored for low power applications. This paper presents an analytical model of subthreshold current of Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA) Junctioless MOSFET. The analytical results were compared with TMSG MOSFET and good agreement was obtained. The sub-threshold current of the device is very low and consider for the implementation of CMOS inverter. A PMOS transistor is designed and the drive current of the PMOS transistor is tuned with the NMOS device to obtain the ideal matching in the drive current. A CMOS inverter has been designed. The transient and DC behavior of the device have been examined. The power dissipation of the CMOS inverter has been computed and compared with CMOS DMG-SOI JLT inverter. The power dissipation is 5 times less in proposed device as compared to CMOS DMG-SOI JLT inverter. This exhibits an excellent improvement in power dissipation which is useful for making low power future generation devices.

In1-xGaxAs Double Metal Gate-Stacking Cylindrical Nanowire MOSFET for highly sensitive Photo detector

This paper proposed a highly sensitive Double Metal Gate-stacking Cylindrical Nanowire-MOSFET (DMG CL-NWMOSFET) photosensor by using In1 − xGaxAs. For the best control of short channel effects (SCEs), a double metal gate has been utilized and for efficient photonic absorption, III-V compound has been utilized as channel material. The currently available Conventional Filed-Effect-Transistors (CFET) based photosensor have been used threshold voltage as parameter for the calculation of sensitivity, but in the proposed photosensor, change in subthreshold current has been used as the detecting parameters for sensitivity (Iillumination/Idark). The scientifically electrons study and the photo-conductive characteristics of In1 − xGaxAs CL-NWMOSFET are taken through Silvaco Atlas Tools. After the analysis of In1 − xGaxAs dual Metal Gate Stacking Cylindrical NWMOSFET responds to detectable spectrum (~ 450 nm), incidents light with constant, reversible and fast response by responsivity (4.3 mAW− 1), high Iillumination/Idark (1.36 * 109) and quantum-efficiency (1.12 %). The obtained results of In1 − xGaxAs DMG CL-NWMOSFET based photodetectors have the potential in optoelectronics applications.

A Novel Approach to Model Threshold Voltage and Subthreshold Current of Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs

This present article interprets the analytical models of central channel potential, the threshold voltage, and subthreshold current for Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs. The parabolic approximation equation with appropriate boundary conditions has been adopted to solve the 2D Poisson’s equation for determining the central channel potential. The minimum channel potential is obtained by potential channel expression, and it is utilized to determine the threshold voltage and subthreshold current by using the Drift-Diffusion method. The behaviour of GD-JL-GAA MOSFETs has been examined by varying physical device parameters such as doping concentration (NDn), channel thickness (tsi), oxide thickness (tox), and channel length ratio (L1 : L2). The mathematical analysis shows that the nominal gate leakage current in GD-JL-GAA MOSFETs due to high graded abrupt junction inside the channel region. The analytical model results have been verified with simulation data extracted from a TCAD simulator.