A Two-Dimensional Model for the Surface Potential and Subthreshold Current of Doped Double-Gate (DG) MOSFETs with a Vertical Gaussian-Like Doping Profile

Sarvesh Dubey; Pramod Kumar Tiwari; S. Jit

doi:10.1166/jno.2010.1119

A Two-Dimensional Model for the Surface Potential and Subthreshold Current of Doped Double-Gate (DG) MOSFETs with a Vertical Gaussian-Like Doping Profile

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2010.1119 ◽

2010 ◽

Vol 5 (3) ◽

pp. 332-339 ◽

Cited By ~ 4

Author(s):

Sarvesh Dubey ◽

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Surface Potential ◽

Doping Profile ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Subthreshold Current ◽

Two Dimensional Model

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Two-dimensional model for subthreshold current and subthreshold swing of graded-channel dual-material double-gate (GCDMDG) MOSFETs

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.03.047 ◽

2017 ◽

Vol 106 ◽

pp. 147-155 ◽

Cited By ~ 6

Author(s):

Ekta Goel ◽

Sanjay Kumar ◽

Balraj Singh ◽

Kunal Singh ◽

Satyabrata Jit

Keyword(s):

Subthreshold Swing ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Subthreshold Current ◽

Two Dimensional Model ◽

Dual Material

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A two-dimensional model for the subthreshold swing of short-channel double-gate metal–oxide–semiconductor field effect transistors with a vertical Gaussian-like doping profile

Journal of Applied Physics ◽

10.1063/1.3552309 ◽

2011 ◽

Vol 109 (5) ◽

pp. 054508 ◽

Cited By ~ 14

Author(s):

Sarvesh Dubey ◽

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Doping Profile ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Short Channel ◽

Two Dimensional Model

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Numerical Corrections to Estimate Depletion Region Width in Pseudo-two-dimensional Model of Double-Gate Tunneling FET

10.1109/niles53778.2021.9600561 ◽

2021 ◽

Author(s):

Muhammad Elgamal ◽

Ahmed Shaker

Keyword(s):

Depletion Region ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Tunneling Fet ◽

Two Dimensional Model ◽

Gate Tunneling

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Two-dimensional model for double-gate LDMOSFET devices

Journal of Computational Electronics ◽

10.1007/s10825-019-01354-y ◽

2019 ◽

Vol 18 (3) ◽

pp. 882-892 ◽

Cited By ~ 1

Author(s):

Mohamed M. El-Dakroury ◽

Zaki Nosseir ◽

Yehea I. Ismail ◽

Hamdy Abdelhamid

Keyword(s):

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Two Dimensional Model

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A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical Gaussian-like doping profile

Journal of Applied Physics ◽

10.1063/1.3460796 ◽

2010 ◽

Vol 108 (3) ◽

pp. 034518 ◽

Cited By ~ 45

Author(s):

Sarvesh Dubey ◽

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Field Effect ◽

Potential Distribution ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Doping Profile ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Short Channel

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Two-dimensional model for asymmetric double-gate tunnel FET considering the source-channel junction depletion region

2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2015.7158548 ◽

2015 ◽

Author(s):

Hongfei Lv ◽

Shingo Sato ◽

Yasuhisa Omura ◽

Abhijit Mallik

Keyword(s):

Depletion Region ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Tunnel Fet ◽

Two Dimensional Model

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A two-dimensional (2D) analytical surface potential and subthreshold current model for the underlap dual-material double-gate (DMDG) FinFET

Journal of Computational Electronics ◽

10.1007/s10825-016-0899-x ◽

2016 ◽

Vol 15 (4) ◽

pp. 1316-1325 ◽

Cited By ~ 8

Author(s):

Vadthiya Narendar ◽

Saurabh Rai ◽

Siddharth Tiwari

Keyword(s):

Surface Potential ◽

Current Model ◽

Double Gate ◽

Two Dimensional ◽

Subthreshold Current ◽

Dual Material

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Two-dimensional model of Dual Metal double gate tunnel FETs

2015 IEEE International WIE Conference on Electrical and Computer Engineering (WIECON-ECE) ◽

10.1109/wiecon-ece.2015.7444001 ◽

2015 ◽

Cited By ~ 1

Author(s):

Samantha Lubaba Noor ◽

Samia Safa ◽

Md. Ziaur Rahman Khan

Keyword(s):

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Two Dimensional Model ◽

Tunnel Fets ◽

Dual Metal

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Pseudo-Two-Dimensional Model for Double-Gate Tunnel FETs Considering the Junctions Depletion Regions

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2040661 ◽

2010 ◽

Vol 57 (4) ◽

pp. 827-834 ◽

Cited By ~ 172

Author(s):

Marie Garcia Bardon ◽

Herc P. Neves ◽

Robert Puers ◽

Chris Van Hoof

Keyword(s):

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Two Dimensional Model ◽

Tunnel Fets

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A two-dimensional (2D) analytical surface potential and subthreshold current model for underlap dual-material double-gate (DMDG) FinFET

Journal of Computational Electronics ◽

10.1007/s10825-016-0890-6 ◽

2016 ◽

Author(s):

Vadthiya Narendar ◽

Saurabh Rai ◽

Siddharth Tiwari

Keyword(s):

Surface Potential ◽

Current Model ◽

Double Gate ◽

Two Dimensional ◽

Subthreshold Current ◽

Dual Material

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