scholarly journals A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET

2011 ◽  
Vol 60 (5) ◽  
pp. 058501
Author(s):  
Qin Shan-Shan ◽  
Zhang He-Ming ◽  
Hu Hui-Yong ◽  
Qu Jiang-Tao ◽  
Wang Guan-Yu ◽  
...  
Keyword(s):  
Current Model ◽  
Two Dimensional ◽  
Soi Mosfet ◽  
Subthreshold Current

A two-dimensional subthreshold current model for strained-Si MOSFET

2011 ◽  
Vol 54 (12) ◽  
pp. 2181-2185 ◽  
Author(s):  
ShanShan Qin ◽  
HeMing Zhang ◽  
HuiYong Hu ◽  
GuanYu Wang ◽  
XiaoYan Wang ◽  
...  
Keyword(s):  
Current Model ◽  
Two Dimensional ◽  
Strained Si ◽  
Subthreshold Current

An Analytical Model for the Subthreshold Current of Fully Depleted Strained-SOI MOSFET

2011 ◽  
Vol 110-116 ◽  
pp. 3332-3337
Author(s):  
Shan Shan Qin ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Xiao Bo Xu ◽  
Xiao Yan Wang
Keyword(s):  
Diffusion Theory ◽  
Current Model ◽  
Theory Model ◽  
Model Verification ◽  
Drift Diffusion ◽  
Strained Si ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Subthreshold Current ◽  
Good Agreement

A subthreshold current model for fully depleted strained Si on insulator (FD SSOI) MOSFET is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using device simulator ISE. Good agreement is obtained between the model’s calculations and the simulated results. This subthreshold current model provides valuable reference to the FD-SSOI MOSFET design.

An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET

2019 ◽  
Vol 9 (2) ◽  
pp. 291-297
Author(s):  
Hind Jaafar ◽  
Abdellah Aouaj ◽  
Ahmed Bouziane ◽  
Benjamin Iñiguez
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Oxide Thickness ◽  
Subthreshold Current ◽  
The Poisson Equation ◽  
Strong Inversion ◽  
Cylindrical Form ◽  
Silvaco Atlas ◽  
Dual Material ◽  
Good Agreement

Background: A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper. Methods: Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is calculated using the expressions of the current density. Results: Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas - TCAD software presents a good agreement from subthreshold to strong inversion regime and for different bias voltages. Conclusion: Two oxide thicknesses with different permittivity can effectively improve the subthreshold current of DMG-GC-DOT MOSFET.

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