A Two-Dimensional Subthreshold Current Model of Recessed-Source/Drain (Re-S/D) SOI MOSFETs with High-k Dielectric

2014 ◽  
Author(s):  
Gopi Krishna Saramekala ◽  
Pramod Kumar Tiwari
Keyword(s):  
Current Model ◽  
Two Dimensional ◽  
Subthreshold Current ◽  
High K ◽  
High K Dielectric

scholarly journals The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition

2012 ◽  
Vol 100 (15) ◽  
pp. 152115 ◽  
Author(s):  
Han Liu ◽  
Kun Xu ◽  
Xujie Zhang ◽  
Peide D. Ye
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

A two-dimensional subthreshold current model for strained-Si MOSFET

2011 ◽  
Vol 54 (12) ◽  
pp. 2181-2185 ◽  
Author(s):  
ShanShan Qin ◽  
HeMing Zhang ◽  
HuiYong Hu ◽  
GuanYu Wang ◽  
XiaoYan Wang ◽  
...  
Keyword(s):  
Current Model ◽  
Two Dimensional ◽  
Strained Si ◽  
Subthreshold Current

scholarly journals A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET

2011 ◽  
Vol 60 (5) ◽  
pp. 058501
Author(s):  
Qin Shan-Shan ◽  
Zhang He-Ming ◽  
Hu Hui-Yong ◽  
Qu Jiang-Tao ◽  
Wang Guan-Yu ◽  
...  
Keyword(s):  
Current Model ◽  
Two Dimensional ◽  
Soi Mosfet ◽  
Subthreshold Current

HfO2/HfS2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS2

Nanoscale ◽  
2018 ◽  
Vol 10 (39) ◽  
pp. 18758-18766 ◽  
Author(s):  
Shen Lai ◽  
Seongjae Byeon ◽  
Sung Kyu Jang ◽  
Juho Lee ◽  
Byoung Hun Lee ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Chemical Conversion ◽  
Native Oxide ◽  
Two Dimensional ◽  
Plasma Oxidation ◽  
High K ◽  
High K Dielectric

We demonstrate that HfO2, a high-K dielectric, can be prepared on the top surface of 2D HfS2 through plasma oxidation, which results in a heterostructure composed of a 2D van der Waals semiconductor and its insulating native oxide.

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