Very high electron mobility In0.8Ga0.2As heterostructure grown by molecular beam epitaxy

Munecazu Tacano; Yoshinobu Sugiyama; Yukihiro Takeuchi; Yoshiki Ueno

doi:10.1007/bf03030211

Very high electron mobility In0.8Ga0.2As heterostructure grown by molecular beam epitaxy

Journal of Electronic Materials ◽

10.1007/bf03030211 ◽

1991 ◽

Vol 20 (12) ◽

pp. 1081-1085 ◽

Cited By ~ 15

Author(s):

Munecazu Tacano ◽

Yoshinobu Sugiyama ◽

Yukihiro Takeuchi ◽

Yoshiki Ueno

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Very High

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Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness

IEEE Transactions on Electron Devices ◽

10.1109/16.987103 ◽

2002 ◽

Vol 49 (3) ◽

pp. 354-360 ◽

Cited By ~ 7

Author(s):

Seong-June Jo ◽

Jeong Hoon Kim ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Critical Layer Thickness ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Extremely high electron mobility of pseudomorphic In0.74Ga0.26As∕In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1807023 ◽

2004 ◽

Vol 85 (18) ◽

pp. 4043-4045 ◽

Cited By ~ 6

Author(s):

T. Kitada ◽

T. Aoki ◽

I. Watanabe ◽

S. Shimomura ◽

S. Hiyamizu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Inp Substrates

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High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.125418 ◽

1999 ◽

Vol 75 (23) ◽

pp. 3653-3655 ◽

Cited By ~ 43

Author(s):

M. J. Murphy ◽

K. Chu ◽

H. Wu ◽

W. Yeo ◽

W. J. Schaff ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

High Frequency ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1481751 ◽

2002 ◽

Vol 20 (3) ◽

pp. 1200 ◽

Cited By ~ 7

Author(s):

O. Baklenov ◽

D. Lubyshev ◽

Y. Wu ◽

X.-M. Fang ◽

J. M. Fastenau ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

Large Diameter ◽

High Electron Mobility Transistor ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

High Electron ◽

High Electron Mobility

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High-electron-mobility ZnO epilayers grown by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.01.035 ◽

2004 ◽

Vol 265 (1-2) ◽

pp. 34-40 ◽

Cited By ~ 68

Author(s):

Kazuhiro Miyamoto ◽

Michihiro Sano ◽

Hiroyuki Kato ◽

Takafumi Yao

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility

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Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.2919163 ◽

2008 ◽

Vol 103 (9) ◽

pp. 093529 ◽

Cited By ~ 39

Author(s):

A. L. Corrion ◽

C. Poblenz ◽

F. Wu ◽

J. S. Speck

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

Morphological Properties ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Fabrication of strained and double heterojunction In/sub x/Ga/sub 1-x/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by solid-source molecular beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/16.841249 ◽

2000 ◽

Vol 47 (5) ◽

pp. 1115-1117 ◽

Cited By ~ 3

Author(s):

S.F. Yoon ◽

B.P. Gay ◽

H.Q. Zheng ◽

H.T. Kam ◽

J. Degenhardt

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction

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Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.4959831 ◽

2016 ◽

Vol 109 (4) ◽

pp. 041602 ◽

Cited By ~ 14

Author(s):

S. Joglekar ◽

M. Azize ◽

M. Beeler ◽

E. Monroy ◽

T. Palacios

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Ohmic Contacts ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Surface Treatments ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/29/4/045011 ◽

2014 ◽

Vol 29 (4) ◽

pp. 045011 ◽

Cited By ~ 31

Author(s):

Stephen W Kaun ◽

Elaheh Ahmadi ◽

Baishakhi Mazumder ◽

Feng Wu ◽

Erin C H Kyle ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Homogeneous Lattice ◽

Lattice Matched

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Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1379785 ◽

2001 ◽

Vol 78 (24) ◽

pp. 3845-3847 ◽

Cited By ~ 21

Author(s):

James B. Webb ◽

H. Tang ◽

J. A. Bardwell ◽

P. Coleridge

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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