Extremely high electron mobility of pseudomorphic In0.74Ga0.26As∕In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy
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2000 ◽
Vol 39
(Part 2, No. 7B)
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pp. L720-L722
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2008 ◽
Vol 26
(3)
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pp. 1078
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2002 ◽
Vol 49
(3)
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pp. 354-360
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2002 ◽
Vol 20
(3)
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pp. 1200
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2004 ◽
Vol 265
(1-2)
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pp. 34-40
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2000 ◽
Vol 47
(5)
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pp. 1115-1117
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2005 ◽
Vol 23
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pp. 1154
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