Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy

2001 ◽  
Vol 78 (24) ◽  
pp. 3845-3847 ◽  
Author(s):  
James B. Webb ◽  
H. Tang ◽  
J. A. Bardwell ◽  
P. Coleridge
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
Molecular Beam ◽  
High Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1010 ◽  
Author(s):  
Ahmed Alyamani ◽  
Evgenii V. Lutsenko ◽  
Mikalai V. Rzheutski ◽  
Vitaly Z. Zubialevich ◽  
Aliaksei G. Vainilovich ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
Molecular Beam ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

2015 ◽  
Vol 117 (24) ◽  
pp. 245305 ◽  
Author(s):  
L. Ravikiran ◽  
K. Radhakrishnan ◽  
S. Munawar Basha ◽  
N. Dharmarasu ◽  
M. Agrawal ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Leakage Current ◽  
Electron Mobility ◽  
Molecular Beam ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility
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