On the physics of clean silicon surface

2007 ◽  
pp. 241-274 ◽  
Author(s):  
Winfried Mönch
Keyword(s):  
Silicon Surface ◽  
Clean Silicon Surface

UV Laser Processing of Semiconductor Devices

1986 ◽  
Vol 75 ◽  
Author(s):  
T. W. Sigmon
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
Silicon Surface ◽  
Device Fabrication ◽  
Electrical Characteristics ◽  
Uv Laser ◽  
High Concentration ◽  
Doping Profiles ◽  
Clean Silicon Surface

AbstractThe use of a pulsed UV excimer laser based process for the incorporation of dopant impurities into Si is described. The process can result in high concentration shallow box like profiles suitable for submicron VLSI device fabrication. The process consists of exposure of the clean silicon surface to a doping gas (B2H6, AsH3, PH3) then driving the adsorbed monolayers of dopant into the Si by a melt-regrowth process initiated by a pulsed XeCl excimer laser. Modeling of the process allows prediction of the resulting doping profiles and electrical properties of the doped layers. Excellent crystal quality of the doped layers is found even without a postdoping anneal. Also, recent results indicate that post doping annealing may not be needed for improvement of the electrical characteristics of the doped layers provided certain conditions are met. Detailed descriptions of the process, results, modeling and device fabrication are presented.

Formation of an Au-Si eutectic on a clean silicon surface

2009 ◽  
Vol 79 (4) ◽  
Author(s):  
A. L. Pinardi ◽  
S. J. Leake ◽  
R. Felici ◽  
I. K. Robinson
Keyword(s):  
Silicon Surface ◽  
Clean Silicon Surface

Azide Reactions for Controlling Clean Silicon Surface Chemistry:  Benzylazide on Si(100)-2 × 1

2006 ◽  
Vol 128 (29) ◽  
pp. 9300-9301 ◽  
Author(s):  
Semyon Bocharov ◽  
Olga Dmitrenko ◽  
Lucila P. Méndez De Leo ◽  
Andrew V. Teplyakov
Keyword(s):  
Surface Chemistry ◽  
Silicon Surface ◽  
Silicon Surface Chemistry ◽  
Clean Silicon Surface

Surface Studies Relevant to the Initial Stages of Diamond Nucleation

1994 ◽  
Vol 339 ◽  
Author(s):  
J. M. Lannon ◽  
J. S. Gold ◽  
C. D. Stinespring
Keyword(s):  
Silicon Surface ◽  
Reaction Channel ◽  
Surface Species ◽  
Growth Processes ◽  
Surface Studies ◽  
Diamond Nucleation ◽  
Clean Silicon Surface

ABSTRACTStudies of diamond heteroepitaxy on silicon indicate that C-C surface species act as nucleation precursors. We have investigated the conversion of the Si(100) 2×1 surface to SiC using C2H4 to obtain an understanding of how C-C species may be formed and to determine the effect of an O-adlayer on enhancing or selecting the reaction channel which leads to these species. Under appropriate conditions, the interaction between C2H4 and the clean silicon surface yields both SiC and C-C species. The presence of an O-adlayer significantly reduces the activity of silicon and enhances the formation of sp2 and sp3 C-C species. These results provide key insights into diamond nucleation conditions in conventional growth processes.

Structural Reconstruction of Atomically-Clean Silicon Surface during Sublimation and Epitaxy

1992 ◽  
pp. 51-66
Author(s):  
A. V. Latyshev ◽  
A. L. Aseev ◽  
A. B. Krasil’nikov ◽  
S. I. Stenin
Keyword(s):  
Silicon Surface ◽  
Clean Silicon Surface

Defining nanoscale metal features on an atomically clean silicon surface with a stencil

2008 ◽  
Vol 19 (28) ◽  
pp. 285302 ◽  
Author(s):  
A Linklater ◽  
J Nogami
Keyword(s):  
Silicon Surface ◽  
Clean Silicon Surface

The adsorption of oxygen on a clean silicon surface

1973 ◽  
Vol 38 (1) ◽  
pp. 275-281 ◽  
Author(s):  
F. Meyer ◽  
J.J. Vrakking
Keyword(s):  
Silicon Surface ◽  
Clean Silicon Surface

The influence of the adsorption of Au, Sb and O2 on the electrical properties of the atomically clean silicon surface

1968 ◽  
Vol 9 (3) ◽  
pp. 407-420 ◽  
Author(s):  
B.A. Nesterenko ◽  
O.V. Snitko ◽  
V.T. Rozumnyuk
Keyword(s):  
Electrical Properties ◽  
Silicon Surface ◽  
Clean Silicon Surface
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