Consensus on Silicon Surface Structure Near: Experiment and theory support a recent Japanese model of the elusive structure of a clean silicon surface, thereby bringing a journey of a quarter century close to its end

Electron microscopy at 0.2nm point-to-point resolution, 10-10 torr specimei region vacuum and facilities for in-situ specimen cleaning presents intere; ing possibilities for surface structure determination. Three methods for examining the surfaces are available: reflection (REM), transmission (TEM) and profile imaging. Profile imaging is particularly useful because it giv good resolution perpendicular as well as parallel to the surface, and can therefore be used to determine the relationship between the surface and the bulk structure.

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Relation Between the Multicrystalline Silicon Surface Structure and the Pit-Trap Effect

Acta Optica Sinica ◽

10.3788/aos201232.0324001 ◽

2012 ◽

Vol 32 (3) ◽

pp. 0324001

Author(s):

王坤霞 Wang Kunxia ◽

冯仕猛 Feng Shimeng ◽

徐华天 Xu Huatian ◽

田嘉彤 Tian Jiatong ◽

杨树泉 Yang Shuquan ◽

...

Keyword(s):

Surface Structure ◽

Silicon Surface ◽

Multicrystalline Silicon

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Influence of Silicon Surface Structure on Long Deoxyribonucleic Acid Molecule Alignment

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.4748 ◽

2003 ◽

Vol 42 (Part 1, No. 7B) ◽

pp. 4748-4751 ◽

Cited By ~ 2

Author(s):

Zhanwen Xiao ◽

Mingxiang Xu ◽

Taizo Ohgi ◽

Daisuke Fujita

Keyword(s):

Surface Structure ◽

Silicon Surface ◽

Deoxyribonucleic Acid ◽

Acid Molecule

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Segregation of Copper to (100) and (111) Silicon Surfaces in Equilibrium with Internal Cu3Si Precipitates

MRS Proceedings ◽

10.1557/proc-448-371 ◽

1996 ◽

Vol 448 ◽

Cited By ~ 1

Author(s):

W. R. Wampler

Keyword(s):

Free Energy ◽

Surface Structure ◽

Silicon Surface ◽

Chemical Potential ◽

Silicon Surfaces ◽

Free Surfaces

AbstractThe energetics of copper segregation to silicon surfaces were examined by measuring the Cu coverage after equilibration between Cu on the surface and internal Cu3Si, for which the Cu chemical potential is known. For oxide-free surfaces the Cu coverage was close to one monolayer on (111) surfaces but was much smaller on (100) surfaces. The Cu coverage was greatly reduced by oxide passivation of the surface. LEED showed the 7×7 structure of the clean (111) silicon surface converted to a quasiperiodic 5×5 structure after equilibrating with Cu3Si. The 2×1 LEED patterns for (100) surfaces indicated no change in surface structure due to the Cu3Si. These results show that the free energy of copper in Cu3Si is higher than that of copper on (111) surfaces but lower than that of copper on (100) surfaces.

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UV Laser Processing of Semiconductor Devices

MRS Proceedings ◽

10.1557/proc-75-619 ◽

1986 ◽

Vol 75 ◽

Cited By ~ 9

Author(s):

T. W. Sigmon

Keyword(s):

Excimer Laser ◽

Laser Processing ◽

Silicon Surface ◽

Device Fabrication ◽

Electrical Characteristics ◽

Uv Laser ◽

High Concentration ◽

Doping Profiles ◽

Clean Silicon Surface

AbstractThe use of a pulsed UV excimer laser based process for the incorporation of dopant impurities into Si is described. The process can result in high concentration shallow box like profiles suitable for submicron VLSI device fabrication. The process consists of exposure of the clean silicon surface to a doping gas (B2H6, AsH3, PH3) then driving the adsorbed monolayers of dopant into the Si by a melt-regrowth process initiated by a pulsed XeCl excimer laser. Modeling of the process allows prediction of the resulting doping profiles and electrical properties of the doped layers. Excellent crystal quality of the doped layers is found even without a postdoping anneal. Also, recent results indicate that post doping annealing may not be needed for improvement of the electrical characteristics of the doped layers provided certain conditions are met. Detailed descriptions of the process, results, modeling and device fabrication are presented.

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