UV Laser Processing of Semiconductor Devices

1986 ◽  
Vol 75 ◽  
Author(s):  
T. W. Sigmon
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
Silicon Surface ◽  
Device Fabrication ◽  
Electrical Characteristics ◽  
Uv Laser ◽  
High Concentration ◽  
Doping Profiles ◽  
Clean Silicon Surface

AbstractThe use of a pulsed UV excimer laser based process for the incorporation of dopant impurities into Si is described. The process can result in high concentration shallow box like profiles suitable for submicron VLSI device fabrication. The process consists of exposure of the clean silicon surface to a doping gas (B2H6, AsH3, PH3) then driving the adsorbed monolayers of dopant into the Si by a melt-regrowth process initiated by a pulsed XeCl excimer laser. Modeling of the process allows prediction of the resulting doping profiles and electrical properties of the doped layers. Excellent crystal quality of the doped layers is found even without a postdoping anneal. Also, recent results indicate that post doping annealing may not be needed for improvement of the electrical characteristics of the doped layers provided certain conditions are met. Detailed descriptions of the process, results, modeling and device fabrication are presented.

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication

2019 ◽  
Vol 963 ◽  
pp. 403-406
Author(s):  
Kaname Imokawa ◽  
Toshifumi Kikuchi ◽  
Kento Okamoto ◽  
Daisuke Nakamura ◽  
Akihiro Ikeda ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Low Cost ◽  
Device Fabrication ◽  
Contact Resistivity ◽  
Power Devices ◽  
High Concentration ◽  
Laser Doping ◽  
Krf Excimer Laser ◽  
Al Thin Film

We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of 4H-SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.

Study of a CdTe high-energy radiation imaging device fabrication by excimer laser processing

2004 ◽  
Vol 1 (4) ◽  
pp. 1050-1053 ◽  
Author(s):  
Toru Aoki ◽  
Volodymyr A. Gnatyuk ◽  
Atsushi Nakamura ◽  
Yasuhiro Tomita ◽  
Yoshinori Hatanaka ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
High Energy ◽  
Device Fabrication ◽  
Imaging Device ◽  
High Energy Radiation ◽  
Energy Radiation ◽  
Radiation Imaging

Tem analysis of multiple-energy arsenic implanted and Rta'd silicon

1987 ◽  
Vol 45 ◽  
pp. 246-247
Author(s):  
R.A. Herring
Keyword(s):  
Device Fabrication ◽  
High Concentration ◽  
Tem Analysis ◽  
Defect Clusters ◽  
High Fluences ◽  
Small Defect ◽  
Before And After ◽  
The Matrix ◽  
The Difference ◽  
Factor Type

Rapid thermal annealing (RTA) of ion-implanted Si is important for device fabrication. The defect structures of 2.5, 4.0, and 6.0 MeV As-implanted silicon irradiated to fluences of 2E14, 4E14, and 6E14, respectively, have been analyzed by electron diffraction both before and after RTA at 1100°C for 10 seconds. At such high fluences and energies the implanted As ions change the Si from crystalline to amorphous. Three distinct amorphous regions emerge due to the three implantation energies used (Fig. 1). The amorphous regions are separated from each other by crystalline Si (marked L1, L2, and L3 in Fig. 1) which contains a high concentration of small defect clusters. The small defect clusters were similar to what had been determined earlier as being amorphous zones since their contrast was principally of the structure-factor type that arises due to the difference in extinction distance between the matrix and damage regions.

Ground water quality of selected areas of Punjab and Sind Provinces, Pakistan: Chemical and microbiological aspects

2019 ◽  
Author(s):  
Chem Int
Keyword(s):  
Ionic Concentration ◽  
Chloride Ions ◽  
Potassium Ions ◽  
Ammonium Ions ◽  
High Concentration ◽  
Phosphate Ions ◽  
Sodium Magnesium ◽  
Very High ◽  
Microbiological Aspects

The assessment of groundwater is essential for the estimation of suitability of water for safe use. An attempt has been made to study the groundwater of selected areas of Punjab (Sheikhupura & Sahiwal) and Sindh (Sindh, Jawar Dharki and Dharki), Pakistan. The results indicate that pH, color and odor were all within limits of WHO that is pH ranges 6.5–8.5, colorless and odorless, respectively. The high values of suspended solids were observed in the Sindh-1 and Dharki samples. Microbiologically only Sahiwal and Jawar Dharki were found fit for drinking purpose. Trace metals analysis of Sheikhupura-1 and Sindh-1 showed that values do not fall within limits of WHO for Iron. The ionic concentration analysis showed that high bicarbonate (HCO3-), ions are present in the samples of Sahiwal and Dharki; Sindh-1 and Jawar Dharki samples showed very high concentration for chloride ions, all samples were satisfactory level for sulphate (SO42-), sodium, magnesium and phosphate ions except samples of Sindh-1 and Jawar Dharki. High concentration of calcium and potassium ions was observed in samples of Sindh-1, while all other samples were found fit for drinking purposes in respect of nitrate, nitrite and ammonium ions. The high concentration of Fluoride was found only in Sheikhupura-2 samples.

An Overview of 300 mm SOI Starting Wafer Quality and Its Yield Detractors

2005 ◽  
Author(s):  
Pei Y. Tsai ◽  
Junedong Lee ◽  
Paul Ronsheim ◽  
Lindsay Burns ◽  
Richard Murphy ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Device Fabrication ◽  
Sampling Plan ◽  
Silicon On Insulator ◽  
Manufacturing Processes ◽  
Circuit Performance ◽  
Characterization Techniques ◽  
Wafer Manufacturing

Abstract A stringent sampling plan is developed to monitor and improve the quality of 300mm SOI (silicon on insulator) starting wafers procured from the suppliers. The ultimate goal is to obtain the defect free wafers for device fabrication and increase yield and circuit performance of the semiconductor integrated circuits. This paper presents various characterization techniques for QC monitor and examples of the typical defects attributed to wafer manufacturing processes.

FACTOR OF QUALITY FOR PASSIVE NON-TUNABLE BAND-STOP FILTERS

2019 ◽  
pp. 71-74
Author(s):  
N. I. Unru ◽  
E. I. Ashcherbagin
Keyword(s):  
Quality Criterion ◽  
Physical Structure ◽  
Electrical Characteristics ◽  
Central Frequency ◽  
Analytical Expression ◽  
Notch Band ◽  
Attenuation Level ◽  
Calculation Results ◽  
Design And Manufacture

The notion of a quality criterion for non-tunable band-stop filters is introduced, and on the basis of it a comparison of filters with different designs is performed. The quality criterion takes into account the electrical characteristics of the filter and its dimensions, including the volume, the central frequency of the notch band, the level of total losses in the passbands, the width of the notch band by the level of total losses, the width of the notch band by attenuation level. Thus, it allows you to compare the quality of design and manufacture of passive notch filters of various types. The necessary analytical expression is presented, and for a number of variants of filter execution, the corresponding calculation results are given. The stated materials allow us to estimate and optimize the system of interrelated parameters of filters of an arbitrary physical structure.

scholarly journals The Influence of Different Plasma Cell Discharges on the Performance Quality of Surgical Gown Samples

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4329
Author(s):  
Atif H. Asghar ◽  
Ahmed Rida Galaly
Keyword(s):  
Mechanical Properties ◽  
Tensile Strength ◽  
Exposure Time ◽  
Electrical Characteristics ◽  
Cathode Fall ◽  
Treatment Efficiency ◽  
Performance Quality ◽  
Surgical Gown ◽  
The One

An experimental study was performed on a low-density plasma discharge using two different configurations of the plasma cell cathode, namely, the one mesh system electrodes (OMSE) and the one mesh and three system electrodes (OMTSE), to determine the electrical characteristics of the plasma such as current–voltage characteristics, breakdown voltage (VB), Paschen curves, current density (J), cathode fall thickness (dc), and electron density of the treated sample. The influence of the electrical characteristics of the plasma fluid in the cathode fall region for different cathode configuration cells (OMSE and OMTSE) on the performance quality of a surgical gown was studied to determine surface modification, treatment efficiency, exposure time, wettability property, and mechanical properties. Over a very short exposure time, the treatment efficiency for the surgical gown surface of plasma over the mesh cathode at a distance equivalent to the cathode fall distance dc values of the OMTSE and for OMSE reached a maximum. The wettability property decreased from 90 to 40% for OMTSE over a 180 s exposure time and decreased from 90 to 10% for OMSE over a 160 s exposure time. The mechanisms of each stage of surgical gown treatment by plasma are described. In this study, the mechanical properties of the untreated and treated surgical gown samples such as the tensile strength and elongation percentage, ultimate tensile strength, yield strength, strain hardening, resilience, toughness, and fracture (breaking) point were studied. Plasma had a more positive effect on the mechanical properties of the OMSE reactor than those of the OMTSE reactor.

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