Surface Studies Relevant to the Initial Stages of Diamond Nucleation
Keyword(s):
ABSTRACTStudies of diamond heteroepitaxy on silicon indicate that C-C surface species act as nucleation precursors. We have investigated the conversion of the Si(100) 2×1 surface to SiC using C2H4 to obtain an understanding of how C-C species may be formed and to determine the effect of an O-adlayer on enhancing or selecting the reaction channel which leads to these species. Under appropriate conditions, the interaction between C2H4 and the clean silicon surface yields both SiC and C-C species. The presence of an O-adlayer significantly reduces the activity of silicon and enhances the formation of sp2 and sp3 C-C species. These results provide key insights into diamond nucleation conditions in conventional growth processes.
1993 ◽
Vol 11
(1)
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pp. 34-46
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1998 ◽
Vol 106
(1)
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pp. 53-59
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Keyword(s):
2007 ◽
pp. 241-274
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