An approach to model manufacturing of an enhanced swing differential Colpitts oscillator based on heterostructures to increase density of their elements with account mismatch-induced stress: on optimization of annealing

In this paper we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress

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On prognosis of optimization of manufacturing of an enhanced swing differential Colpitts oscillator based on heterostructures to increase density of elements with account influence of mismatch-induced stress

ISSS Journal of Micro and Smart Systems ◽

10.1007/s41683-020-00062-1 ◽

2020 ◽

Vol 9 (2) ◽

pp. 151-162

Author(s):

E. L. Pankratov

Keyword(s):

Colpitts Oscillator ◽

Induced Stress

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On Prognosis of Manufacturing of an Enhanced Swing Differential Colpitts Oscillator Based on Heterostructures to Increase Density of Their Elements: Influence of Mismatch-Induced Stress

Journal of Materials Science and Engineering with Advanced Technology ◽

10.18642/jmseat_7100122146 ◽

2020 ◽

Vol 21 (1) ◽

pp. 23-69

Author(s):

E. L. Pankratov ◽

Keyword(s):

Integrated Circuits ◽

Ion Implantation ◽

Heat Transport ◽

Field Effect ◽

Analytical Approach ◽

Field Effect Transistors ◽

Radiation Defects ◽

Colpitts Oscillator ◽

Induced Stress ◽

Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

Download Full-text