Studies on electrical switching behavior of As-Te-Tl glasses – effect of local structure on switching type and composition dependence of switching voltages

2005 ◽  
Vol 82 (2) ◽  
pp. 345-348 ◽  
Author(s):  
B.H. Sharmila ◽  
S. Asokan
Keyword(s):  
Local Structure ◽  
Composition Dependence ◽  
Switching Behavior ◽  
Electrical Switching ◽  
Switching Type

The composition dependence of electrical switching behavior of Ge7Se93−xSbx glasses

2009 ◽  
Vol 355 (52-54) ◽  
pp. 2630-2633 ◽  
Author(s):  
B.J. Madhu ◽  
H.S. Jayanna ◽  
S. Asokan
Keyword(s):  
Composition Dependence ◽  
Switching Behavior ◽  
Electrical Switching

The Voltage and Composition Dependence of Switching in a Polymer Current Limiter Device

1999 ◽  
Vol 600 ◽  
Author(s):  
Anil R. Duggal
Keyword(s):  
Composite Material ◽  
High Resistance ◽  
Composition Dependence ◽  
Arc Discharge ◽  
High Resistance State ◽  
Switching Behavior ◽  
Electrical Characteristics ◽  
Electrical Switching ◽  
Resistance State ◽  
Current Limiter

AbstractThe high power electrical switching properties of a polymer current limiter device are studied as a function of applied voltage. It is shown that a dramatic change in switching behavior occurs at a characteristic voltage. Below this voltage, the device switches to a high resistance state whereas at higher applied voltages it does not. It is shown that the high voltage, low resistance state has similar electrical characteristics to an arc discharge. Material variation experiments are also described which demonstrate that the changeover depends sensitively on the contact resistance between the filler particles of the composite material.

Electrical switching behavior of bulk Cux(AsSe1.4I0.2)100−x glasses: Composition dependence and topological effects

2012 ◽  
Vol 152 (13) ◽  
pp. 1160-1163 ◽  
Author(s):  
Miloš P. Slankamenac ◽  
Svetlana R. Lukić-Petrović ◽  
Miloš B. Živanov ◽  
Kristina Čajko
Keyword(s):  
Composition Dependence ◽  
Switching Behavior ◽  
Electrical Switching

Electrical switching properties and structural characteristics of GeSe–GeTe films

Nanoscale ◽  
2019 ◽  
Vol 11 (4) ◽  
pp. 1595-1603 ◽  
Author(s):  
Kun Ren ◽  
Min Zhu ◽  
Wenxiong Song ◽  
Shilong Lv ◽  
Mengjiao Xia ◽  
...  
Keyword(s):  
Structural Characteristics ◽  
Switching Behavior ◽  
Structural Motifs ◽  
Electrical Switching

The local structural motifs in GeSe–GeTe have been determined, which is essential to understand its thermal and electrical switching behavior.

Local structure and electrical switching in Al20Te75X5 (X = Si, Ge, As, Sb) glasses

2020 ◽  
Vol 126 (4) ◽  
Author(s):  
P. T. Wilson ◽  
R. Ramanna ◽  
Shweta Chahal ◽  
Roopali Shekhawat ◽  
M. Madesh Kumar ◽  
...  
Keyword(s):  
Local Structure ◽  
Electrical Switching

scholarly journals Modeling Electrical Switching Behavior of Carbon Resistive Memory

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 8735-8742
Author(s):  
Qiao-Feng Ou ◽  
Lei Wang ◽  
Bang-Shu Xiong
Keyword(s):  
Switching Behavior ◽  
Resistive Memory ◽  
Electrical Switching

Composition Dependence of Dielectric Anomaly in Strontium Bismuth Tantalate Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
Koichi Takemura ◽  
Takehiro Noguchi ◽  
Takashi Hase ◽  
Hidekazu Kimura ◽  
Yoichi Miyasaka
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Local Structure ◽  
Remanent Polarization ◽  
Composition Dependence ◽  
Lattice Structure ◽  
Ferroelectric Properties ◽  
Dielectric Anomaly ◽  
Strontium Bismuth Tantalate ◽  
First Order

AbstractEffects of off-stoichiometry and Nb substitution on the dielectric anomaly and ferroelectric properties have been investigated for SrBi2Ta2O9(SBT) thin films. Local atomic environment for the stoichiometric and off-stoichiometric SBT films has been also measured. The features of the dielectric anomaly, the Curie temperature (Tc), and the temperature dependence of the spontaneous polarization (Ps) are independent of the film thickness, and are governed by the nature of the crystal. For the stoichiometric Sr content SBT films, the grain size increases and the temperature dependence of the remanent polarization (Pr) decreases with increasing thickness. For the films with Sr/Bi/Ta = 0.8/2/2 and 0.8/2.2/2, Sr deficient local structure was observed, and such lattice structure probably leads to higher Tc than the stoichiometric crystal. Nb substitution for Ta also raises Tc, and makes the dielectric anomaly sharper. The phase transition associated with the dielectric anomaly for these films is thought to be first-order.

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