Influence of surface strain on the MOVPE growth of InGaP epitaxial layers

2007 ◽  
Vol 87 (3) ◽  
pp. 511-516 ◽  
Author(s):  
J. Novák ◽  
S. Hasenöhrl ◽  
I. Vávra ◽  
M. Kučera
Keyword(s):  
Surface Strain ◽  
Epitaxial Layers ◽  
Movpe Growth

Tem Studies of CD:ZN:TE-Based II-VI Superlattices and Epitaxial Layers

1990 ◽  
Vol 216 ◽  
Author(s):  
P.D. Brown ◽  
H. Kelly ◽  
P.A. Clifton ◽  
J.T. Mullins ◽  
M.Y. Simmons ◽  
...  
Keyword(s):  
Growth Process ◽  
Epitaxial Layers ◽  
Movpe Growth

ABSTRACTA TEM study is presented charting the development of a MOVPE growth process for the deposition of CdTe//ZnTe superlattices. In addition, MBE grown (Cd,Zn)Te//CdTe superlattices deposited onto GaAs and InSb substrates are compared.

MOVPE growth optimisation of CdTe epitaxial layers for p-i -n diode X-ray detector fabrication

2006 ◽  
Vol 3 (4) ◽  
pp. 754-757 ◽  
Author(s):  
M. Traversa ◽  
F. Marzo ◽  
P. Prete ◽  
L. Tapfer ◽  
A. Cappello ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
X Ray ◽  
Movpe Growth

scholarly journals Large-Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)

2021 ◽  
Author(s):  
Arun Kumar ◽  
Raimondo Cecchini ◽  
Lorenzo Locatelli ◽  
Claudia Wiemer ◽  
Christian Martella ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Epitaxial Layers ◽  
Large Area ◽  
Movpe Growth

IMPROVEMENT OF GaAs EPITAXIAL LAYERS BY INDIUM INCORPORATION

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-693-C4-696 ◽  
Author(s):  
J. P. LAURENTI ◽  
P. ROENTGEN ◽  
K. WOLTER ◽  
K. SEIBERT ◽  
H. KURZ ◽  
...  
Keyword(s):  
Epitaxial Layers

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Sign in / Sign up

Export Citation Format

Share Document