The rapid market development for SiC-devices during the last years can be attributed
particularly to the success in supplying high-quality SiC wafers and corresponding epitaxial layers.
The device quality could be enhanced and the costs were reduced by enlarging the wafer size as
well as by a significant progress in epitaxial growth of active layers by using multi-wafer CVD systems.
In this paper we want to give an overview of CVD multi-wafer systems used for SiC growth
in the past and today. We present recent results of SiC homoepitaxial growth using our multi-wafer
hot-wall CVD system. This equipment exhibits a capacity of 5×3” wafers per run and can be upgraded
to a 7×3” or 5×4” setup. By optimizing the process conditions epitaxial layers with excellent
crystal quality, purity and homogeneity of doping and thickness have been grown. Issues like reproducibility,
drift of parameters and system stability over several runs will be discussed.
Large-Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)
