Fabrication and characterization of novel transparent conducting oxide N-CNT doped ZnO for photovoltaic applications

This paper reported the preparation and characterization of transparent conducting oxide thin films. Undoped and doped ZnO thin films were prepared by SILAR method. The micro-structural and optical properties were investigated. X-ray diffraction patterns revealed that the prepared thin films are polycrystalline in nature and has a hexagonal structure. The micro-structural properties of prepared thin films were calculated and crystallite size tends to changes due to dopant. The texture coefficients have been evaluated and found to be greater than unity revealing high texturing of the film. Undoped and Mn-doped ZnO prefer the orientation of (002) but Ni-doped ZnO and Mn and Ni co-doped ZnO prefers (100) orientation. The transmittance spectra of pure and transition metal-doped films were plotted against UV-Vis-NIR region and found that the transmittance changes with dopant and nature of doping. The optical band gap values were found to be in the range of 3.00–3.39 eV. The optical constants such as extinction coefficient, refractive index, dielectric constant and optical conductivity were examined.

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Preparation and characterization of Al and Mn doped ZnO (ZnO: (Al, Mn)) transparent conducting oxide films

Journal of Solid State Chemistry ◽

10.1016/j.jssc.2003.11.030 ◽

2004 ◽

Vol 177 (4-5) ◽

pp. 1480-1487 ◽

Cited By ~ 74

Author(s):

H.T. Cao ◽

Z.L. Pei ◽

J. Gong ◽

C. Sun ◽

R.F. Huang ◽

...

Keyword(s):

Transparent Conducting Oxide ◽

Oxide Films ◽

Transparent Conducting ◽

Doped Zno ◽

Mn Doped

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Depositions and characterization of sol–gel processed Al-doped ZnO (AZO) as transparent conducting oxide (TCO) for solar cell application

Journal of Theoretical and Applied Physics ◽

10.1007/s40094-019-0329-0 ◽

2019 ◽

Vol 13 (2) ◽

pp. 123-132 ◽

Cited By ~ 8

Author(s):

Afrina Sharmin ◽

Samia Tabassum ◽

M. S. Bashar ◽

Zahid Hasan Mahmood

Keyword(s):

Solar Cell ◽

Transparent Conducting Oxide ◽

Sol Gel ◽

Solar Cell Application ◽

Transparent Conducting ◽

Doped Zno

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Characterization of ZnO Thin Films and Ga doped ZnO Thin Films Post Annealing for Transparent Conducting Oxide Application

Journal of the Korean Institute of Electrical and Electronic Material Engineers ◽

10.4313/jkem.2009.22.7.567 ◽

2009 ◽

Vol 22 (7) ◽

pp. 567-571

Author(s):

Jae-Ho Jang ◽

Hyo-Jun Bae ◽

Ji-Su Lee ◽

Kwang-Hyun Jung ◽

Hyon-Kwang Choi ◽

...

Keyword(s):

Thin Films ◽

Transparent Conducting Oxide ◽

Zno Thin Films ◽

Post Annealing ◽

Transparent Conducting ◽

Doped Zno

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Nitrogen grain-boundary passivation of In-doped ZnO transparent conducting oxide

Physical Review Materials ◽

10.1103/physrevmaterials.2.043402 ◽

2018 ◽

Vol 2 (4) ◽

Cited By ~ 3

Author(s):

D. Ali ◽

M. Z. Butt ◽

C. Coughlan ◽

D. Caffrey ◽

I. V. Shvets ◽

...

Keyword(s):

Grain Boundary ◽

Transparent Conducting Oxide ◽

Transparent Conducting ◽

Doped Zno

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Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer

Nanoscale Research Letters ◽

10.1186/1556-276x-7-29 ◽

2012 ◽

Vol 7 (1) ◽

pp. 29 ◽

Cited By ~ 19

Author(s):

Seong-Ho Baek ◽

Bum-Young Noh ◽

Il-Kyu Park ◽

Jae Hyun Kim

Keyword(s):

Solar Cells ◽

Seed Layer ◽

Antireflection Coating ◽

Zno Nanorod ◽

Doped Zno ◽

Fabrication And Characterization

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Fabrication and Characterization of Ferroelectric Polymer/TiO2/Al-doped ZnO Structures

MRS Proceedings ◽

10.1557/proc-1071-f03-05 ◽

2008 ◽

Vol 1071 ◽

Author(s):

Koji Aizawa

Keyword(s):

Leakage Current ◽

Vinylidene Fluoride ◽

Ferroelectric Properties ◽

Hysteresis Loops ◽

Tio2 Films ◽

Gate Leakage Current ◽

Poly Vinylidene Fluoride ◽

Doped Zno ◽

Fabrication And Characterization

AbstractCharacterization of 700-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/TiO2/Al-doped ZnO (AZO) structures on a glass substrate were investigated. In this study, the sputtered TiO2 films as insulator were used for the reduction of leakage current. The leakage current density of the fabricated Pt/P(VDF/TrFE)/AZO and Pt/P(VDF/TrFE)/170-nm-thick TiO2/AZO structures were approximately 8.7 and 3.9 nA/cm2 at the applied voltage of 10 V, respectively. In the polarization vs. voltage characteristics, the fabricated Pt/P(VDF/TrFE)/TiO2/AZO structures showed hysteresis loops caused by ferroelectric polarization. The remnant polarization (2Pr) and coercive voltage (2Vc) measured from a saturated hysteresis loop at the frequency of 50 Hz were approximately 12 μC/cm2 and 105 V, respectively. These results suggest that the insertion of TiO2 film is available for reducing the gate leakage current without changing the ferroelectric properties.

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