Fabrication and Characterization of Well-aligned Arsenic-doped ZnO Nanowires

2011 ◽  
Vol 32 (2) ◽  
pp. 154-158
Author(s):  
冯秋菊 FENG Qiu-ju ◽  
冯宇 FENG Yu ◽  
梁红伟 LIANG Hong-wei ◽  
王珏 WANG Jue ◽  
陶鹏程 TAO Peng-cheng ◽  
...  
2008 ◽  
Vol 1071 ◽  
Author(s):  
Koji Aizawa

AbstractCharacterization of 700-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/TiO2/Al-doped ZnO (AZO) structures on a glass substrate were investigated. In this study, the sputtered TiO2 films as insulator were used for the reduction of leakage current. The leakage current density of the fabricated Pt/P(VDF/TrFE)/AZO and Pt/P(VDF/TrFE)/170-nm-thick TiO2/AZO structures were approximately 8.7 and 3.9 nA/cm2 at the applied voltage of 10 V, respectively. In the polarization vs. voltage characteristics, the fabricated Pt/P(VDF/TrFE)/TiO2/AZO structures showed hysteresis loops caused by ferroelectric polarization. The remnant polarization (2Pr) and coercive voltage (2Vc) measured from a saturated hysteresis loop at the frequency of 50 Hz were approximately 12 μC/cm2 and 105 V, respectively. These results suggest that the insertion of TiO2 film is available for reducing the gate leakage current without changing the ferroelectric properties.


2016 ◽  
Vol 119 (8) ◽  
pp. 084306 ◽  
Author(s):  
Ahmed S. Al-Asadi ◽  
Luke Alexander Henley ◽  
Sujoy Ghosh ◽  
Abdiel Quetz ◽  
Igor Dubenko ◽  
...  

2020 ◽  
Vol 167 (6) ◽  
pp. 067506 ◽  
Author(s):  
Yen-Lin Chu ◽  
Liang-Wen Ji ◽  
Yu-Jen Hsiao ◽  
Hao-Ying Lu ◽  
Sheng-Joue Young ◽  
...  

2016 ◽  
Author(s):  
Abhisek Mishra ◽  
Saswat Mohapatra ◽  
Himanshu Sekhar Gouda ◽  
Udai P. Singh

2006 ◽  
Vol 9 (5-6) ◽  
pp. 717-729 ◽  
Author(s):  
Ramon Tena-Zaera ◽  
Margaret A. Ryan ◽  
Abou Katty ◽  
Gary Hodes ◽  
Stéphane Bastide ◽  
...  

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