Impact of gate dielectric on overall electrical performance of Quadruple gate FinFET

2022 ◽  
Vol 128 (2) ◽  
Author(s):  
Ho Le Minh Toan ◽  
Rupam Goswami
Keyword(s):  
Gate Dielectric ◽  
Electrical Performance

Improved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric

2019 ◽  
Vol 12 (6) ◽  
pp. 064005 ◽  
Author(s):  
Xinyuan Zhao ◽  
Jingping Xu ◽  
Lu Liu ◽  
Pui-To Lai ◽  
Wing-Man Tang
Keyword(s):  
Gate Dielectric ◽  
Electrical Performance

Effect of oxygen to argon ratio on the electrical performance of Ta2O5 gate dielectric thin film transistor

2021 ◽  
Vol 36 (12) ◽  
pp. 1623-1629
Author(s):  
Chao WANG ◽  
◽  
Fu-nan LIU ◽  
Fan YANG ◽  
Han-yue ZHANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Electrical Performance ◽  
Dielectric Thin Film ◽  
Effect Of Oxygen

Interface Quality and Electrical Performance of Low-Temperature Metal Organic Chemical Vapor Deposition Aluminum Oxide Thin Films for Advanced CMOS Gate Dielectric Applications

2002 ◽  
Vol 745 ◽  
Author(s):  
Spyridon Skordas ◽  
Filippos Papadatos ◽  
Steven Consiglio ◽  
Eric Eisenbraun ◽  
Alain Kaloyeros
Keyword(s):  
Dielectric Constant ◽  
Leakage Current ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Oxide Semiconductor ◽  
Electrical Performance ◽  
Organic Chemical ◽  
Si Substrates ◽  
Annealing Conditions ◽  
Metal Organic

ABSTRACTIn this work, the electrical performance and interfacial characteristics of MOCVD-grown Al2O3 films are evaluated. Electrical characteristics (dielectric constant, leakage current) of as-deposited and annealed capacitor metal-oxide-semiconductor (MOS) stacks were determined using capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the electrical properties were dependent upon specific annealing conditions, with an anneal in O2 followed by forming gas being superior with respect to leakage current, resulting in leakage characteristics superior to those of SiO2. All annealing conditions evaluated led to an increase in dielectric constant from 6.5 to 9.0–9.8. Also, Al2O3 growth and interfacial oxide growth characteristics on oxynitride/Si and Si substrates were evaluated and compared using spectroscopic ellipsometry. A parasitic oxide layer was observed to form on silicon during the initial stages of MOCVD Al2O3 growth, while a thin oxynitride layer deposited on Si prevented the growth of interfacial oxide.

Effects of Mechanical Strain on the Electrical Performance of Amorphous Silicon Thin-Film Transistors with a New Gate Dielectric

2009 ◽  
Vol 1196 ◽  
Author(s):  
Katherine Wei Song ◽  
Lin Han ◽  
Sigurd Wagner ◽  
Prashant Mandlik
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Hybrid Material ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Compressive Strain ◽  
Mechanical Strain ◽  
Electrical Performance ◽  
Silicon Thin Film ◽  
Transfer Characteristics

AbstractThe stiff SiNx gate dielectric in conventional amorphous silicon thin film transistors (TFTs) limits their flexibility by brittle fracture when in tension. We report the effect on the overall flexibility of TFTs of replacing the brittle SiNx gate dielectric with a new, resilient SiO2-silicone hybrid material, which is deposited by plasma enhanced chemical vapor deposition. Individual TFTs on a 50μm-thick polyimide foil were bent to known radii, and measurement of transfer characteristics were made both during strain and after re-flattening. Compared with conventional TFTs made with SiNx, TFTs made with the new hybrid material demonstrated similar flexibility when strained in compression and significantly increased flexibility when strained in tension. Under bending to compressive strain, all TFTs tested delaminated from the substrate for compressive strains greater than 2%. Conventional a-Si:H/SiNx TFTs have been previously found to delaminate at a similar compressive strain. Under bending to tensile strain, the most flexible TFTs made with the new hybrid material that were tested after re-flattening did not exhibit significant changes in transfer characteristics up to strains of ∼2.5%. Conventional a-Si:H/SiNx TFTs have been found to remain functional for strains of up to 0.5%, a value only one-fifth of that for TFTs made with the new hybrid material.

Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric

2017 ◽  
Vol 64 (3) ◽  
pp. 1020-1025 ◽  
Author(s):  
Ming Wen ◽  
Jingping Xu ◽  
Lu Liu ◽  
Pui-To Lai ◽  
Wing-Man Tang
Keyword(s):  
Gate Dielectric ◽  
Electrical Performance
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