scholarly journals Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor

2016 ◽  
Vol 10 (9) ◽  
pp. 703-707 ◽  
Author(s):  
Li Ning Liu ◽  
Hoi Wai Choi ◽  
Jing Ping Xu ◽  
Pui To Lai
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Performance ◽  
Metal Oxide Semiconductor Capacitor

High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric

2007 ◽  
Vol 91 (9) ◽  
pp. 093509 ◽  
Author(s):  
N. Goel ◽  
P. Majhi ◽  
W. Tsai ◽  
M. Warusawithana ◽  
D. G. Schlom ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Indium Content ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Indium Content ◽  
Metal Oxide Semiconductor Capacitor

Electrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al2O3as gate dielectric

2016 ◽  
Vol 9 (12) ◽  
pp. 121002 ◽  
Author(s):  
Kexiong Zhang ◽  
Meiyong Liao ◽  
Masataka Imura ◽  
Toshihide Nabatame ◽  
Akihiko Ohi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Hysteresis ◽  
Metal Oxide Semiconductor Capacitor
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