Pulsed laser deposition of ZnO as conductive buffer layer of (001)-LiNbO 3 thin films

1998 ◽  
Vol 67 (4) ◽  
pp. 493-497 ◽  
Author(s):  
J.-M. Liu ◽  
C.K. Ong
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition

Pulsed laser deposition of YBCO thin films on metal substrates with YSZ buffer layer

1997 ◽  
Vol 19 (8-9) ◽  
pp. 1033-1039 ◽  
Author(s):  
L. Ceresara ◽  
F. Fuso ◽  
E. Arimondo ◽  
P. Scardi
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Metal Substrates ◽  
Ybco Thin Films

scholarly journals High-Quality ZnO Thin Films Grown by Fast Pulsed Laser Deposition without a Buffer Layer

2005 ◽  
Vol 44 (No. 31) ◽  
pp. L995-L997 ◽  
Author(s):  
Ming-Zheng Lin ◽  
Chun-Tsung Su ◽  
Hong-Chang Yan ◽  
Ming-Yau Chern
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
High Quality

Fabrication of SrRuO3 Epitaxial Thin Films on YBa2Cu3Ox / CeO2 / YSZ - Buffered Si Substrates by Pulsed Laser Deposition

2003 ◽  
Vol 786 ◽  
Author(s):  
Takamitsu Higuchi ◽  
Koichi Morozumi ◽  
Setsuya Iwashita ◽  
Masaya Ishida ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Process Condition ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Epitaxial Thin Films ◽  
Rocking Curve ◽  
Si Substrates

ABSTRACTPseudocubic SrRuO3 (100) epitaxial thin films were fabricated on Si (100) with a YBa2Cu3Ox / CeO2 / YSZ (yttria-stabilized-zirconia) triple buffer layer ∼ 14 nm thick by pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) revealed that the first buffer layer of YSZ (100) was epitaxially grown on naturally oxidized Si (100) substrates with the process condition of PB (base pressure) = 1×10-Torr, PO2 (oxygen partial pressure) = 5×10- Torr, and Ts (substrate temperature) = 700 °C. Higher deposition rate of YSZ in the range of 0 ∼ 0.6 nm/min brought about better crystallinity with a smaller value of a full-width at half maximum (FWHM) in the YSZ (200) rocking curve. Subsequent deposition of CeO2, YBa2Cu3Ox, and SrRuO3 resulted in an SrRuO3 (100) epitaxial thin film exhibiting good crystallinity with FWHM = 1.7° in the SrRuO3 (200) rocking curve.

Pulsed laser deposition of PbMg1/3Nb2/3O3 thin films and PbMg1/3Nb2/3O3/PbTiO3 multilayers

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Platinum Electrodes
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