A squared bossed diaphragm piezoresistive pressure sensor based on CNTs for low pressure range with enhanced sensitivity

Author(s):  
Rekha Devi ◽  
Sandeep Singh Gill
Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1103
Author(s):  
Jae Sang Heo ◽  
Keon Woo Lee ◽  
Jun Ho Lee ◽  
Seung Beom Shin ◽  
Jeong Wan Jo ◽  
...  

Among various wearable health-monitoring electronics, electronic textiles (e-textiles) have been considered as an appropriate alternative for a convenient self-diagnosis approach. However, for the realization of the wearable e-textiles capable of detecting subtle human physiological signals, the low-sensing performances still remain as a challenge. In this study, a fiber transistor-type ultra-sensitive pressure sensor (FTPS) with a new architecture that is thread-like suspended dry-spun carbon nanotube (CNT) fiber source (S)/drain (D) electrodes is proposed as the first proof of concept for the detection of very low-pressure stimuli. As a result, the pressure sensor shows an ultra-high sensitivity of ~3050 Pa−1 and a response/recovery time of 258/114 ms in the very low-pressure range of <300 Pa as the fiber transistor was operated in the linear region (VDS = −0.1 V). Also, it was observed that the pressure-sensing characteristics are highly dependent on the contact pressure between the top CNT fiber S/D electrodes and the single-walled carbon nanotubes (SWCNTs) channel layer due to the air-gap made by the suspended S/D electrode fibers on the channel layers of fiber transistors. Furthermore, due to their remarkable sensitivity in the low-pressure range, an acoustic wave that has a very tiny pressure could be detected using the FTPS.


Sensor Review ◽  
2019 ◽  
Vol 39 (4) ◽  
pp. 586-597 ◽  
Author(s):  
Manjunath Manuvinakurake ◽  
Uma Gandhi ◽  
Mangalanathan Umapathy ◽  
Manjunatha M. Nayak

Purpose Structures play a very important role in developing pressure sensors with good sensitivity and linearity, as they undergo deformation to the input pressure and function as the primary sensing element of the sensor. To achieve high sensitivity, thinner diaphragms are required; however, excessively thin diaphragms may induce large deflection and instability, leading to the unfavorable performances of a sensor in terms of linearity and repeatability. Thereby, importance is given to the development of innovative structures that offer good linearity and sensitivity. This paper aims to investigate the sensitivity of a bossed diaphragm coupled fixed guided beam three-dimensional (3D) structure for pressure sensor applications. Design/methodology/approach The proposed sensor comprises of mainly two sensing elements: the first being the 3D mechanical structure made of bulk silicon consisting of boss square diaphragm along with a fixed guided beam landing on to its center, forming the primary sensing element, and the diffused piezoresistors, which form the secondary sensing element, are embedded in the tensile and compression regions of the fixed guided beam. This micro mechanical 3 D structure is packaged for applying input pressure to the bottom of boss diaphragm. The sensor without pressure load has no deflection of the diaphragm; hence, no strain is observed on the fixed guided beam and also there is no change in the output voltage. When an input pressure P is applied through the pressure port, there is a deformation in the diaphragm causing a deflection, which displaces the mass and the fixed guided beam vertically, causing strain on the fixed guided beam, with tensile strain toward the guided end and compressive strain toward the fixed end of the close magnitudes. The geometrical dimensions of the structure, such as the diaphragm, boss and fixed guided beam, are optimized for linearity and maximum strain for an applied input pressure range of 0 to 10 bar. The structure is also analyzed analytically, numerically and experimentally, and the results are compared. Findings The structure offers equal magnitudes of tensile and compressive stresses on the surface of the fixed guided beam. It also offers good linearity and sensitivity. The analytical, simulation and experimental studies of this sensor are introduced and the results correlate with each other. Customized process steps are followed wherein two silicon-on-insulator (SOI) wafers are fusion bonded together, with SOI-1 wafer used to realize the diaphragm along with the boss and SOI-2 wafer to realize the fixed guided beam, leading to formation of a 3D structure. The geometrical dimensions of the structure, such as the diaphragm, boss and fixed guided beam, are optimized for linearity and maximum strain for an applied input pressure range of 0 to10 bar. Originality/value This paper presents a unique and compact 3D micro-mechanical structure pressure sensor with a rigid center square diaphragm (boss diaphragm) and a fixed guided beam landing at its center, with diffused piezoresistors embedded in the tensile and compression regions of the fixed guided beam. A total of six masks were involved to realize and fabricate the 3D structure and the sensor, which is presumed to be the first of its kind in the fabrication of MEMS-based piezoresistive pressure sensor.


2012 ◽  
Vol 241-244 ◽  
pp. 1024-1027 ◽  
Author(s):  
S.Maflin Shaby ◽  
A. Vimala Juliet

In this paper a surface micromachined MEMS Piezoresistive pressure sensor was designed. A simulation programs were developed to predict the sensitivity and linearity behavior of the piezoresistive pressure sensor. Based on the small and large deflection theory the diaphragm performances were analyzed. Different diaphragm shape, pressure range, placement of resistors and the properties of the resistors were considered during the analysis. The output response of the pressure sensor was also found as a function of temperature and pressure. It was found that silicon germanium gave better sensitivity and less linearity error. The analysis showed that sensitivity and linearity are influenced by diaphragm thickness and length of the sensing resistor used in the diaphragm of the Piezoresistive pressure sensor. It was found that the sensitivity of 5.2mV/V can be achieved for silicon germanium


2019 ◽  
Vol 33 (07) ◽  
pp. 1950040 ◽  
Author(s):  
Samridhi ◽  
Manish Kumar ◽  
Sachin Dhariwal ◽  
Kulwant Singh ◽  
P. A. Alvi

This paper reports the stress and frequency analysis of dynamic silicon diaphragm during the simulation of micro-electro-mechanical-systems (MEMS) based piezoresistive pressure sensor with the help of finite element method (FEM) within the frame work of COMSOL software. Vibrational modes of rectangular diaphragm of piezoresistive pressure sensor have been determined at different frequencies for different pressure ranges. Optimal frequency range for particular applications for any diaphragm is a very important so that MEMS sensors performance should not degrade during the dynamic environment. Therefore, for the MEMS pressure sensor having applications in dynamic environment, the diaphragm frequency of 280 KHz has been optimized for the diaphragm thickness of 50 [Formula: see text]m and hence this frequency can be considered for showing the better piezoresistive effect and high sensitivity. Moreover, the designed pressure sensor shows the high linearity and enhanced sensitivity of the order of ([Formula: see text]0.5066 mV/psi).


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