IR/R/G/B laser diodes for multi-wavelength applications

2018 ◽  
Vol 26 (1) ◽  
pp. 152-161 ◽  
Author(s):  
Hidenori Kawanishi
2005 ◽  
Author(s):  
S. M. Lopez Silva ◽  
R. Giannetti ◽  
M. L. Dotor ◽  
D. Golmayo ◽  
P. Martin ◽  
...  

1994 ◽  
Vol 05 (04) ◽  
pp. 543-567
Author(s):  
A. SCHERER ◽  
J. O’BRIEN ◽  
G. ALMOGY ◽  
W.-H. XU ◽  
A. YARIV ◽  
...  

We have developed new low threshold surface emitting laser designs with dielectric high reflectivity top mirrors. Here, we describe the characteristics of these surface emitting vertical cavity lasers (VCSELs) which exhibit stable mode patterns and low threshold currents. The new device fabrication sequence which we employ is able to adjust the emission wavelength of the lasers during the final fabrication step and allow the development of stable multi-wavelength laser arrays. These quantum-well based laser diodes are demonstrated at 0.72 μm with threshold currents of 20 mA, at 0.85 μm with threshold currents of 3 mA, at 0.98 μm with threshold currents of 4 mA, and at 1.55 μm with threshold currents of 17 mA. Our VCSELs also display remarkably low threshold voltages, thus minimizing the laser power dissipation and improving the wallplug efficiency. The flexibility resulting from depositing one or both of the mirrors after the fabrication of the laser diodes opens the way to the development of new and more versatile laser structures.


2019 ◽  
Vol 27 (22) ◽  
pp. 31164 ◽  
Author(s):  
Juned N. Kemal ◽  
Pablo Marin-Palomo ◽  
Vivek Panapakkam ◽  
Philipp Trocha ◽  
Stefan Wolf ◽  
...  

1998 ◽  
Vol 52 (2) ◽  
pp. 93-96
Author(s):  
I. A. Sukhoivanov ◽  
W. Freude

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