Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries
2003 ◽
Vol 18
(2)
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pp. 170-173
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1998 ◽
Vol 37
(Part 1, No. 6A)
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pp. 3309-3312
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2003 ◽
Vol 42
(Part 2, No. 12B)
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pp. L1507-L1508
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2002 ◽
Vol 49
(7)
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pp. 1129-1135
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Keyword(s):
1993 ◽
Vol 29
(10)
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pp. 2607-2618
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Keyword(s):