Dielectric Properties of Steatites at Microwave and Radio Frequencies before and after Irradiation

Atomic Energy ◽  
2014 ◽  
Vol 115 (6) ◽  
pp. 402-408
Author(s):  
N. V. Eremina ◽  
N. S. Kostyukov
2018 ◽  
Vol 08 (05) ◽  
pp. 1850031 ◽  
Author(s):  
Ambika Ray ◽  
Banarji Behera ◽  
Tanmoy Basu ◽  
Saumitra Vajandar ◽  
Santosh Kumar Satpathy ◽  
...  

[Formula: see text](BiFe[Formula: see text]GdxO3)–y(PbZrO3) composites [Formula: see text], having four different Gd concentrations ([Formula: see text], 0.1, 0.15, and 0.2), were synthesized and their structural, dielectric, and ferroelectric properties have been studied using different characterization techniques. In addition, to investigate the effect of ion implantation on the microstructure and dielectric properties, these composites were exposed to 2[Formula: see text]MeV He[Formula: see text]-ions. Modifications of the structure, surface morphology and electrical properties of the samples before and after ion exposure were demonstrated using powder X-ray diffraction (XRD), scanning electron microscopy (SEM) technique, and LCR meter. The compositional analysis was carried out using energy dispersive X-ray spectrometry (EDS). XRD results demonstrated a decrease in the intensity profile of the dominant peak by a factor of 6 showing a degradation of the crystallinity. Willliamson–Hall (WH) plots reveal reduction in the grain size after irradiation along with an increase in strain and dislocation density. A decrease in the dielectric constant and loss has been recorded after ion beam exposure with reduction in ac conductivity value. The contribution of grain and grain boundary effect in conduction mechanism has been addressed using Nyquist plots. All the samples demonstrate a lossy ferroelectric loop which shows a clear modification upon irradiation. The role of structural defects modifying the physical properties of the composite materials is discussed in this work.


1998 ◽  
Vol 12 (29n31) ◽  
pp. 3412-3417 ◽  
Author(s):  
F. Tang ◽  
M. Chinkhota ◽  
W. D. Brown ◽  
J. T. Wang

The piezoelectric PZT thick films were fabricated by spinning and painting techniques in our laboratory. The purpose of this paper is to study the characteristics of the piezoelectric films that could be used as the sensors in devices, smart materials and structures. The effects of processing methods and processing conditions on dielectric properties of thick films are investigated. The temperature dependencies of the dielectric constants and the loss of the sample are measured before and after poling. Our experimental results might provide a better understanding of the behavior of these types of materials regarding their applications in monitoring, active controlling and diagnosing.


1996 ◽  
Vol 17 (5) ◽  
pp. 425-426 ◽  
Author(s):  
Yongjun Lu ◽  
Hongming Cui ◽  
Jue Yu ◽  
Satoru Mashimo

2019 ◽  
Vol 27 (2) ◽  
pp. 85-88
Author(s):  
T. V. Panchenko ◽  
L. M. Karpova

The temperature-frequency dependences of the complex dielectric permittivity ε and the voltage-farad characteristics of undoped and aluminum doped Bi12SiO20 crystals are studied before and after their polarization. It is shown that Al ions in the Bi12SiO20 dielectric matrix provide a significant increase as well as nonlinearity of ε in the temperature range 300 – 800 K and electric field strengths Е = 103 – 104 V/cm. It is shown that polarization causes the appearance of dielectric hysteresis loops. Al impurity significantly affects the appearance and parameters of these loops. The role of Al ions in increasing the contribution of the quasi-dipole mechanism in the polarization processes is revealed.


Materials ◽  
2014 ◽  
Vol 7 (2) ◽  
pp. 1113-1121 ◽  
Author(s):  
Takayuki Kumagai ◽  
Hiroyuki Yoshida ◽  
Masanori Ozaki

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