Studies on the oxidation rate of metallic inert anodes by measuring the oxygen evolved in low-temperature aluminium electrolysis

2011 ◽  
Vol 41 (11) ◽  
pp. 1301-1309 ◽  
Author(s):  
V. A. Kovrov ◽  
A. P. Khramov ◽  
Yu. P. Zaikov ◽  
V. N. Nekrasov ◽  
M. V. Ananyev
Keyword(s):  
Low Temperature ◽  
Oxidation Rate ◽  
Aluminium Electrolysis ◽  
Inert Anodes

Corrosion of NiFe2O4–10NiO-based cermet inert anodes for aluminium electrolysis

2013 ◽  
Vol 23 (12) ◽  
pp. 3816-3821 ◽  
Author(s):  
Han-bing HE ◽  
Yuan WANG ◽  
Jia-ju LONG ◽  
Zhao-hui CHEN
Keyword(s):  
Aluminium Electrolysis ◽  
Inert Anodes

The Effect of Ge Segregation on Oxidation of Si

1987 ◽  
Vol 105 ◽  
Author(s):  
E. C. Frey ◽  
N. R. Parikh ◽  
M. L. Swanson ◽  
M. Z. Numan ◽  
W. K. Chu
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Epitaxial Layer ◽  
Atmospheric Pressure ◽  
Oxidation Rate ◽  
Oxidation Temperature ◽  
Pressure Oxidation ◽  
Enhanced Oxidation ◽  
High Pressure Oxidation

AbstractWe have studied oxidation of various Si samples including: Ge implanted Si, CVD and MBE grown Si(0.4–4% Ge) alloys, and MBE grown Si-Si(Ge) superlattices. The samples were oxidized in pyrogenic steam (800–1000°C, atmospheric pressure) and at low temperature and high pressure (740°C, 205 atm of dry O2). The oxidized samples were analyzed with RBS/channeling and ellipsometry.An enhanced oxidation rate was seen for all Ge doped samples, compared with rates for pure Si. The magnitude of the enhancement increased with decreasing oxidation temperature. For steam oxidations the Ge was segregated from the oxide and formed an epitaxial layer at the Si-SiO2 interface; the quality of the epitaxy was highest for the highest oxidation temperatures. For high pressure oxidation the Ge was trapped in the oxide and the greatest enhancement in oxidation rate (>100%) was observed.

Metallic Inert Anodes for Aluminium Electrolysis

2012 ◽  
pp. 123-131 ◽  
Author(s):  
I. Galasiu ◽  
R. Galasiu ◽  
C. Nicolescu
Keyword(s):  
Aluminium Electrolysis ◽  
Inert Anodes

High Temperature Corrosion of M-40Cr-0.5Ce Alloys as Inert Anodes in Aluminium Electrolysis

2011 ◽  
Vol 696 ◽  
pp. 254-259 ◽  
Author(s):  
Yu Ping Zhu ◽  
Ye Dong He ◽  
De Ren Wang
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Oxide Film ◽  
High Temperature Corrosion ◽  
Anodic Current Density ◽  
Aluminium Electrolysis ◽  
Vacuum Melting ◽  
Anodic Current ◽  
Inert Anodes ◽  
Excellent Corrosion Resistance

Fe-40Cr-0.5Ce and Ni-40Cr-0.5Ce alloys prepared by vacuum melting have been studied as inert anodes in aluminium electrolysis. High temperature corrosion of these alloy anodes was conducted in cryolite-alumina electrolytes at anodic current density of 0.5 A/cm2, at 800°C and 900°C for 10h respectively. It is found that a Cr2O3 scale was selectively formed on the surface of Ni-40Cr-0.5Ce anode at 900°C, corresponding to excellent corrosion resistance during aluminium electrolysis and higher purity of aluminium product. While a composite oxide film was developed on the surface of Fe-40Cr-0.5Ce anode at 800°C. The formation of Cr2O3 scale is controlled by both of the dissolving rate of Cr2O3 scale in electrolyte and the diffusing rate of Cr in alloys, so the M-Cr alloys require a high content of Cr for inert anodes application.

scholarly journals An update on inert anodes for aluminium electrolysis

2020 ◽  
pp. 15-23 ◽  
Author(s):  
A. S. Yasinskiy ◽  
◽  
S. K. Padamata ◽  
P. V. Polyakov ◽  
A. V. Shabanov ◽  
...  
Keyword(s):  
Aluminium Electrolysis ◽  
Inert Anodes

Study of Cu-Ni-Fe Alloys as Inert Anodes for Al Production in Low-Temperature KF-AlF3 Electrolyte

2019 ◽  
Vol 50 (6) ◽  
pp. 3103-3111 ◽  
Author(s):  
Sylvain Jucken ◽  
Bernard Tougas ◽  
Boyd Davis ◽  
Daniel Guay ◽  
Lionel Roué
Keyword(s):  
Low Temperature ◽  
Inert Anodes ◽  
Fe Alloys

Low Temperature Oxidation of PTSI on As-Doped Si

1987 ◽  
Vol 106 ◽  
Author(s):  
J. P. Gambino ◽  
B. Cunningham ◽  
F. E. Turene ◽  
J. F. Shepard
Keyword(s):  
Low Temperature ◽  
Oxidation Rate ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation

ABSTRACTPtSi on As-doped polysilicon oxidizes rapidly at temperatures as low as 500 °C. The resulting SiO2-PtSi and PtSi-polysilicon interfaces are very rough. Silicide inclusions are present in the oxide, probably due to differences in oxidation rate between different PtSi grains. The presence of some inclusions near the SiO2 surface suggests that PtSi dissociates during oxidation. Rapid oxidation does not occur for PtSi on B or P-doped polysilicon, or for As concentrations of 1×1020 cm−3 or less.

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