Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates

2008 ◽  
Vol 75 (1) ◽  
pp. 96-103 ◽  
Author(s):  
V. Z. Zubialevich ◽  
E. V. Lutsenko ◽  
V. N. Pavlovskii ◽  
A. L. Gurskii ◽  
A. V. Danilchyk ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Silicon Substrates ◽  
Multiple Quantum

Effect of the Density of Surface V-Defects on Laser Properties of InGaN/GaN Heterostructures with Multiple Quantum Wells Grown on Silicon Substrates

2022 ◽  
Author(s):  
A. V. Danilchyk ◽  
A. V. Nagornyi ◽  
N. V. Rzheutskyi ◽  
A. G. Voinilovich ◽  
V. N. Pavlovskyi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Silicon Substrates ◽  
Multiple Quantum

EFFECT OF THE DENSITY OF SURFACE V-DEFECTS ON LASER PROPERTIES OF InGaN/GaN HETEROSCTRUCTURES WITH MULTIPLE QUANTUM WELLS GROWN ON SILICON SUBSTRATES

2021 ◽  
Vol 88 (6) ◽  
pp. 895-899
Author(s):  
A. V. Danilchyk ◽  
A. V. Nagornyi ◽  
N. V. Rzheutskyi ◽  
A. G. Voinilovich ◽  
V. N. Pavlovskyi ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Quantum Wells ◽  
Power Density ◽  
Optical Excitation ◽  
Radiative Properties ◽  
Multiple Quantum Wells ◽  
Threshold Power ◽  
Silicon Substrates ◽  
Multiple Quantum ◽  
Coating Layers

We investigated the radiative properties of InGaN/GaN heterostructures with multiple quantum wells (MQWs) grown on silicon substrates with different thicknesses of quantum wells at optical excitation. The correlation of laser and photoluminescent properties with the surface morphology of the gallium nitride coating layers and the density of V-defects has been established. It is shown that, with a growth in the density of V-defects, the threshold power density of the excitation of the generation of InGaN/GaN heterostructures with MQWs increases.

scholarly journals Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates

2018 ◽  
Vol 13 (1) ◽  
Author(s):  
Tao Lin ◽  
Zhi Yan Zhou ◽  
Yao Min Huang ◽  
Kun Yang ◽  
Bai Jun Zhang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Silicon Substrates ◽  
Multiple Quantum

Optical properties of (11¯01) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates

2011 ◽  
Vol 318 (1) ◽  
pp. 500-504 ◽  
Author(s):  
Ching-Hsueh Chiu ◽  
Da-Wei Lin ◽  
Chien-Chung Lin ◽  
Zhen-Yu Li ◽  
Yi-Chen Chen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Silicon Substrates ◽  
Multiple Quantum

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

FAR INFRARED MAGNETO-ABSORPTION STUDY OF BARRIER IMPURITIES AND SCREENING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Absorption Study

Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars

2012 ◽  
Vol 100 (26) ◽  
pp. 261103 ◽  
Author(s):  
J.-R. Chang ◽  
S.-P. Chang ◽  
Y.-J. Li ◽  
Y.-J. Cheng ◽  
K.-P. Sou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Luminescent Properties ◽  
Multiple Quantum Wells ◽  
Core Shell ◽  
Multiple Quantum

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

2011 ◽  
Vol 98 (18) ◽  
pp. 181904 ◽  
Author(s):  
Shigetaka Tomiya ◽  
Yuya Kanitani ◽  
Shinji Tanaka ◽  
Tadakatsu Ohkubo ◽  
Kazuhiro Hono
Keyword(s):  
Quantum Wells ◽  
Atomic Scale ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Scale Characterization
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