Influence of Annealing Conditions on the Luminescence and Photoelectric Properties of Pure and Mn2+-Activated ZnGa2O4 Thin Films

PLT(28) thin films deposited on glass substrates were studied by two sputtering processes. One is an in situ magnetron sputtering and the other is a low-temperature magnetron sputtering. The sintered PLT ceramic powders are used as a sputtering target for both processes. The influences of sputtering and annealing conditions on structure and crystallinity of the films were investigated. The electro-optic (E-O) properties of PLT(28) thin films prepared by the two processes were determined by a technique according to Faraday effect. The researches showed the E-O properties were strongly affected by the sputtering process. The film with larger grains exhibits stronger E-O effect. The quadratic E-O coefficient of PLT(28) thin film varies in the range of 0.1 × 10−16 to 1.0 × 10−16 (m/v)2.

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Electric, thermoelectrical and photoelectric properties of CuGaxIn1−xSe2 thin films

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2004.03.007 ◽

2004 ◽

Vol 65 (7) ◽

pp. 1353-1357 ◽

Cited By ~ 3

Author(s):

B.A. Mansour ◽

I.K. El Zawawi ◽

A. Abdel-All ◽

H. Shaban

Keyword(s):

Thin Films ◽

Photoelectric Properties

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Effect of annealing conditions on structural and magnetic properties of laser ablated copper ferrite thin films

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2012.01.004 ◽

2012 ◽

Vol 324 (10) ◽

pp. 1814-1817 ◽

Cited By ~ 7

Author(s):

A.T. Raghavender ◽

Nguyen Hoa Hong ◽

Chulkwon Park ◽

Myung-Hwa Jung ◽

Kyu Joon Lee ◽

...

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Copper Ferrite ◽

Annealing Conditions ◽

Structural And Magnetic Properties ◽

Ferrite Thin Films

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Surface morphology and photoelectric properties of FTO ceramic thin films under a simple transparent cover-assisted laser annealing

Materials Research Bulletin ◽

10.1016/j.materresbull.2018.09.002 ◽

2018 ◽

Vol 108 ◽

pp. 151-155 ◽

Cited By ~ 9

Author(s):

Bao-jia Li ◽

Guang-yu Yang ◽

Li-jing Huang ◽

Wei Zu ◽

Huang Li ◽

...

Keyword(s):

Thin Films ◽

Surface Morphology ◽

Laser Annealing ◽

Ceramic Thin Films ◽

Photoelectric Properties

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Investigation of optical and photoelectric properties of poly (ohydroxyamide) sensitized by phthalocyanine as a perspective material for solar cells

E3S Web of Conferences ◽

10.1051/e3sconf/202022001019 ◽

2020 ◽

Vol 220 ◽

pp. 01019

Author(s):

Elvira Fazalova ◽

Konstantin Kochunov ◽

Elena Bodyago ◽

Georgii Konoplev ◽

Nikolay Mukhin ◽

...

Keyword(s):

Thin Films ◽

Solar Radiation ◽

Near Infrared ◽

Wavelength Region ◽

Organic Dye ◽

Glass Substrates ◽

Photoelectric Properties ◽

Zinc Phthalocyanines ◽

Infrared Spectral ◽

Potential Use

Optical and photoelectric properties of poly (ohydroxyamide) (PHA) sensitized with zinc phthalocyanines were investigated in the visible and near infrared spectral regions. The structures were deposited on glass substrates by centrifugation and subsequent drying of a PHA film without thermal annealing. Optical spectra revealed characteristic absorption peaks of phthalocyanine in the longer wavelength region at 620-640 nm and 680-700 nm; absorption of the PHA matrix monotonously increases to the shorter wavelengths starting from 700 nm. Measurements of the photocurrent under irradiation with a high-power LED at a wavelength 630 nm showed photoconductivity related to the organic dye; photoconductivity also was observed while irradiated at 540 nm, presumably due to the absorption of PHA matrix. For non-sensitized (dye-free) PHA films no detectable photocurrents were produced by 630 nm irradiation. It was shown that introducing of phthalocyanines significantly improves optical absorption and photoconductivity of PHA thin films at the wavelengths, where the maximum in the spectral distribution of solar radiation lies. It was concluded that phthalocyanine-sensitized PHA has the potential use as a photosensitive organic material for solar applications, for example in developing composite organicinorganic structures with ferroelectrics.

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