Luminescence Properties of Surface Radiation-Induced Defects in Lithium Fluoride

2013 ◽  
Vol 80 (5) ◽  
pp. 731-736 ◽  
Author(s):  
A. P. Voitovich ◽  
V. S. Kalinov ◽  
E. F. Martynovich ◽  
A. N. Novikov ◽  
L. P. Runets ◽  
...  
Keyword(s):  
Lithium Fluoride ◽  
Surface Radiation ◽  
Luminescence Properties ◽  
Radiation Induced ◽  
Induced Defects

The aggregation and characteristics of radiation-induced defects in lithium fluoride nanocrystals

2013 ◽  
Vol 168 (2) ◽  
pp. 130-136 ◽  
Author(s):  
A. P. Voitovich ◽  
V. S. Kalinov ◽  
M. V. Korzhik ◽  
E. F. Martynovich ◽  
L. P. Runets ◽  
...  
Keyword(s):  
Lithium Fluoride ◽  
Radiation Induced ◽  
Induced Defects

Photoluminescence behavior of surface radiation induced color centers in lithium fluoride and influence of nanosized clusters

2017 ◽  
Vol 188 ◽  
pp. 75-80 ◽  
Author(s):  
A.P. Voitovich ◽  
P.A. Loiko ◽  
X. Mateos ◽  
L.P. Runets ◽  
J.M. Serres ◽  
...  
Keyword(s):  
Lithium Fluoride ◽  
Surface Radiation ◽  
Color Centers ◽  
Radiation Induced ◽  
Photoluminescence Behavior

Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 92-93
Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Structural Disorder ◽  
Flux Lines ◽  
Pinning Effect ◽  
Magnetic Flux Lines ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

EXAFS STUDY ON RADIATION INDUCED DEFECTS

1986 ◽  
Vol 47 (C8) ◽  
pp. C8-1045-C8-1048
Author(s):  
T. BOLZE ◽  
J. PEISL
Keyword(s):  
Radiation Induced ◽  
Exafs Study ◽  
Induced Defects

Annealing of radiation-induced defects in ion-implanted AIIBVI single crystals

1989 ◽  
Vol 32 (3) ◽  
pp. 198-203
Author(s):  
A. N. Georgobiani ◽  
M. B. Kotlyarevskii ◽  
B. P. Dement'ev ◽  
V. N. Mikhalenko ◽  
N. V. Serdyuk ◽  
...  
Keyword(s):  
Single Crystals ◽  
Radiation Induced ◽  
Induced Defects ◽  
Ion Implanted

Formation of Drawing- or Radiation-Induced Defects in Germanium-Doped Silica Core Optical Fiber

1994 ◽  
Vol 33 (Part 2, No. 2B) ◽  
pp. L233-L234 ◽  
Author(s):  
Yoshinori Hayashi ◽  
Yuki Okuda ◽  
Hisamitsu Mitera ◽  
Keizo Kato
Keyword(s):  
Optical Fiber ◽  
Radiation Induced ◽  
Silica Core ◽  
Induced Defects

Raman scattering by radiation induced defects

1969 ◽  
Vol 30 (4) ◽  
pp. 253-254 ◽  
Author(s):  
I.R. Nair ◽  
C.E. Hathaway
Keyword(s):  
Raman Scattering ◽  
Radiation Induced ◽  
Induced Defects

Effect of pressure on the properties of p-n junctions with radiation-induced defects

1969 ◽  
Vol 12 (12) ◽  
pp. 1634-1636
Author(s):  
V. I. Gaman ◽  
V. F. Agafonnikov
Keyword(s):  
Effect Of Pressure ◽  
Radiation Induced ◽  
Induced Defects
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