Annealing of radiation-induced defects in ion-implanted AIIBVI single crystals

1989 ◽  
Vol 32 (3) ◽  
pp. 198-203
Author(s):  
A. N. Georgobiani ◽  
M. B. Kotlyarevskii ◽  
B. P. Dement'ev ◽  
V. N. Mikhalenko ◽  
N. V. Serdyuk ◽  
...  
Keyword(s):  
Single Crystals ◽  
Radiation Induced ◽  
Induced Defects ◽  
Ion Implanted

scholarly journals Глубокие центры радиационных дефектов в монокристаллах CdZnTe, созданные потоком быстрых нейтронов

2018 ◽  
Vol 52 (3) ◽  
pp. 322 ◽  
Author(s):  
С.В. Пляцко ◽  
Л.В. Рашковецкий
Keyword(s):  
Activation Energy ◽  
Neutron Flux ◽  
Fast Neutron ◽  
Single Crystals ◽  
Isothermal Annealing ◽  
Fast Neutron Flux ◽  
Photoluminescence Properties ◽  
Radiation Induced ◽  
Induced Defects

AbstractThe effect of a fast neutron flux (Φ = 10^14–10^15 cm^–2) on the electrical and photoluminescence properties of p -CdZnTe single crystals is studied. Isothermal annealing is performed ( T = 400–500 K), and the activation energy of the dissociation of radiation-induced defects is determined at E _D ≈ 0.75 eV.

Radiation-induced defects in gadolinium gallium garnet (GGG) single crystals

1995 ◽  
Author(s):  
Andrej O. Matkovskii ◽  
D. Y. Sugack ◽  
Sergii B. Ubizskii ◽  
I. V. Kityk ◽  
Marian Kuzma
Keyword(s):  
Single Crystals ◽  
Gadolinium Gallium Garnet ◽  
Radiation Induced ◽  
Induced Defects

scholarly journals Features of Radiation-Defect Annealing in n-Ge Single Crystals Irradiated with High-Energy Electrons

2019 ◽  
Vol 64 (2) ◽  
pp. 151
Author(s):  
S. V. Luniov ◽  
A. I. Zimych ◽  
M. V. Khvyshchun ◽  
V. T. Maslyuk ◽  
I. G. Megela
Keyword(s):  
Single Crystals ◽  
High Energy ◽  
Measured Temperature ◽  
Hall Constant ◽  
Defect Annealing ◽  
Before And After ◽  
Temperature Dependences ◽  
Radiation Induced ◽  
Disordered Crystal ◽  
Induced Defects

The isothermal annealing of n-Ge single crystals irradiated with 10-MeV electrons to the fluence Φ = 5 × 1015 cm−2 has been studied. On the basis of the measured temperature dependences of the Hall constant and by solving the electroneutrality equations, the concentrations of radiation-induced defects (A-centers) in irradiated n-Ge single crystals are calculated both before and after the annealing. An anomalous increase of the Hall constant is found, when the irradiated n-Ge single crystals were annealed at Tan = 403 K for up to 3 h. The annealing at the temperature Tan = 393 K for 1 h gave rise to the np conversion in the researched crystals. The revealed effects can be explained by the concentration growth of A-centers owing to the generation of vacancies at the annealing of disordered crystal regions.

Radiation-induced defects in sapphire single crystals irradiated by a pulsed ion beam

2020 ◽  
Vol 466 ◽  
pp. 1-7 ◽  
Author(s):  
D.V. Ananchenko ◽  
S.V. Nikiforov ◽  
V.N. Kuzovkov ◽  
A.I. Popov ◽  
G.R. Ramazanova ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ion Beam ◽  
Radiation Induced ◽  
Induced Defects

Influence of the dopant species on radiation-induced defects in Si single crystals

2000 ◽  
Vol 87 (12) ◽  
pp. 8389-8392 ◽  
Author(s):  
Aurangzeb Khan ◽  
Masafumi Yamaguchi ◽  
Minoru Kaneiwa ◽  
Tatsue Saga ◽  
Takao Abe ◽  
...  
Keyword(s):  
Single Crystals ◽  
Radiation Induced ◽  
Induced Defects

Reduction of the annealing temperature of radiation-induced defects in ion-implanted MOS structures

2004 ◽  
Vol 78 (4) ◽  
pp. 607-610
Author(s):  
S. Kaschieva ◽  
S.N. Dmitriev ◽  
W. Skorupa
Keyword(s):  
Annealing Temperature ◽  
Radiation Induced ◽  
Induced Defects ◽  
Mos Structures ◽  
Ion Implanted

Radiation-induced defects in SrMgF4 single crystals irradiated by fast electrons

2019 ◽  
Author(s):  
A. Yu. Sofronova ◽  
V. A. Pustovarov ◽  
I. N. Ogorodnikov
Keyword(s):  
Single Crystals ◽  
Fast Electrons ◽  
Radiation Induced ◽  
Induced Defects

Erratum: “Influence of the dopant species on radiation-induced defects in Si single crystals” [J. Appl. Phys. 87, 8389 (2000)]

2000 ◽  
Vol 88 (6) ◽  
pp. 3785-3785 ◽  
Author(s):  
Aurangzeb Khan ◽  
Masafumi Yamaguchi ◽  
Minoru Kaneiwa ◽  
Tatsue Saga ◽  
Takao Abe ◽  
...  
Keyword(s):  
Single Crystals ◽  
Radiation Induced ◽  
Induced Defects

Effect of residual radiation-induced defects on characteristics of ion-implanted gallium arsenide p-n junctions

1978 ◽  
Vol 21 (7) ◽  
pp. 958-960
Author(s):  
B. S. Azikov ◽  
V. N. Brudnyi ◽  
A. P. Vyatkin ◽  
M. A. Krivov ◽  
V. M. Lupin ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Radiation Induced ◽  
Induced Defects ◽  
Ion Implanted
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