scholarly journals Effects of impurities on the lattice dynamics of nanocrystalline silicon for thermoelectric application

2012 ◽  
Vol 48 (7) ◽  
pp. 2836-2845 ◽  
Author(s):  
Tania Claudio ◽  
Gabi Schierning ◽  
Ralf Theissmann ◽  
Hartmut Wiggers ◽  
Helmut Schober ◽  
...  
Keyword(s):  
Lattice Dynamics ◽  
Nanocrystalline Silicon ◽  
Thermoelectric Application

scholarly journals Lattice dynamics and thermoelectric properties of nanocrystalline silicon-germanium alloys

2015 ◽  
Vol 213 (3) ◽  
pp. 515-523 ◽  
Author(s):  
Tania Claudio ◽  
Niklas Stein ◽  
Nils Petermann ◽  
Daniel G. Stroppa ◽  
Michael Marek Koza ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Silicon Germanium ◽  
Lattice Dynamics ◽  
Nanocrystalline Silicon ◽  
Silicon Germanium Alloys

scholarly journals Nanocrystalline silicon: lattice dynamics and enhanced thermoelectric properties

2014 ◽  
Vol 16 (47) ◽  
pp. 25701-25709 ◽  
Author(s):  
Tania Claudio ◽  
Niklas Stein ◽  
Daniel G. Stroppa ◽  
Benedikt Klobes ◽  
Michael Marek Koza ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Lattice Dynamics ◽  
Nanocrystalline Silicon ◽  
Silicon Lattice

Crystal structure and lattice dynamics of hydrogen-loaded austenitic steel

2003 ◽  
Vol 112 ◽  
pp. 407-410
Author(s):  
S. A. Danilkin ◽  
M. Hölzel ◽  
H. Fuess ◽  
H. Wipf ◽  
T. J. Udovic ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Austenitic Steel ◽  
Lattice Dynamics

INVESTIGATION OF LATTICE DYNAMICS WITH117Sn AND119Sn

1974 ◽  
Vol 35 (C6) ◽  
pp. C6-375-C6-377
Author(s):  
W. MÜLLER ◽  
H. WINKLER ◽  
E. GERDAU
Keyword(s):  
Lattice Dynamics

LATTICE DYNAMICS CALCULATIONS FOR SOLID BIPHENYL IN THE HIGH TEMPERATURE PHASE

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-599-C6-601 ◽  
Author(s):  
T. Wasiutynski ◽  
I. Natkaniec ◽  
A. I. Belushkin
Keyword(s):  
High Temperature ◽  
Lattice Dynamics ◽  
High Temperature Phase ◽  
Temperature Phase

Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films

2020 ◽  
Vol 65 (3) ◽  
pp. 236
Author(s):  
R. M. Rudenko ◽  
O. O. Voitsihovska ◽  
V. V. Voitovych ◽  
M. M. Kras’ko ◽  
A. G. Kolosyuk ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Nanocrystalline Silicon ◽  
Recrystallization Temperature ◽  
Nanocrystalline Phase ◽  
Silicon Phase ◽  
Silicon Nanocrystallites ◽  
Lower Temperature ◽  
Two Stages

The process of crystalline silicon phase formation in tin-doped amorphous silicon (a-SiSn) films has been studied. The inclusions of metallic tin are shown to play a key role in the crystallization of researched a-SiSn specimens with Sn contents of 1–10 at% at temperatures of 300–500 ∘C. The crystallization process can conditionally be divided into two stages. At the first stage, the formation of metallic tin inclusions occurs in the bulk of as-precipitated films owing to the diffusion of tin atoms in the amorphous silicon matrix. At the second stage, the formation of the nanocrystalline phase of silicon occurs as a result of the motion of silicon atoms from the amorphous phase to the crystalline one through the formed metallic tin inclusions. The presence of the latter ensures the formation of silicon crystallites at a much lower temperature than the solid-phase recrystallization temperature (about 750 ∘C). A possibility for a relation to exist between the sizes of growing silicon nanocrystallites and metallic tin inclusions favoring the formation of nanocrystallites has been analyzed.

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

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