(111)-Oriented Pb(Zr0.52Ti0.48)O3 thin film on Pt(111)/Si substrate using CoFe2O4 nano-seed layer by pulsed laser deposition

2013 ◽  
Vol 24 (10) ◽  
pp. 3736-3743 ◽  
Author(s):  
M. Khodaei ◽  
S. A. Seyyed Ebrahimi ◽  
Yong Jun Park ◽  
Seungwoo Song ◽  
Hyun Myung Jang ◽  
...  
Catalysts ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 954
Author(s):  
Anna Cyza ◽  
Łukasz Cieniek ◽  
Tomasz Moskalewicz ◽  
Wojciech Maziarz ◽  
Jan Kusiński ◽  
...  

The aim of the presented investigations was to deposit the thin films La1−xSrxFeO3 (x = 0, 0.1, 0.2) on (100) Si substrate by using the Pulsed Laser Deposition (PLD) method. Structure was exanimated by using XRD, SEM, AFM, TEM and XPS methods. The catalytic properties were analyzed in 4 ppm acetone atmosphere. The doping of Sr thin films La1−xSrxFeO3 (x = 0, 0.1, 0.2) resulted in a decrease in the size of the crystallites, the volume of the elemental cell and change in the grain morphology. In the LaFeO3 and La0.9Sr0.1FeO3, clusters around which small grains grow are visible in the structure, while in the layer La0.8Sr0.2FeO3, the visible grains are elongated. The TEM analysis has shown that the obtained thin films had a thickness in the range 150–170 nm with triangular or flat column ends. The experiment performed in the presence of gases allowed us to conclude that the surfaces (101/020) in the triangle-shaped columns and the plane (121/200) faces in flat columns were exposed to gases. The best properties in the presence of CH3COCH3 gas were noted for LaFeO3 thin film with triangle columns ending with orientation (101/020).


2002 ◽  
Vol 748 ◽  
Author(s):  
Akira Shibuya ◽  
Minoru Noda ◽  
Masanori Okuyama

ABSTRACTC axis-oriented Bi4Ti3O12–SrBi4Ti4O15 (B IT-SB Ti) intergrowth epitaxial ferroelectric thin films have been grown by pulsed laser deposition (PLD) method on MgO (001) and SrTiO3 (001) substrates. The epitaxial growth of BIT-SBTi intergrowth thin films were confirmed by X-ray diffraction (XRD) θ-2θ scan, pole figure plots and reciprocal space mappings. The c axis lattice constant of the BIT-SBTi intergrowth thin film is very close to that of made up of regular stacking of one-halves of the unit cells of Bi4Ti3O12 (3.296 nm) and SrBi4Ti4O15 (4.189 nm). The annealed BIT-SBTi thin film on Pt/Ti/SiO2/Si substrate shows intergrowth structure, too, and exhibits superior ferroelectricity that the values of 2Pr and 2Ec are 32.0 μC/cm2 and 190 kV/cm, respectively. The annealed BIT-SBTi film shows that the degradation of switching charge after 1×1010 switching cycles was 16.5%. This ferroelectric enhancement is attributed to strain of pseudo-perovskite layers interacting through Bi2O2 layer. The dielectric constant and dielectric loss of the annealed BIT-SBTi film were 433 and 0.037, respectively.


2000 ◽  
Vol 76 (18) ◽  
pp. 2490-2492 ◽  
Author(s):  
P. A. Atanasov ◽  
R. I. Tomov ◽  
J. Perriére ◽  
R. W. Eason ◽  
N. Vainos ◽  
...  

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