Enhanced Performance of GaN-Based Light-Emitting Diodes by Using Al Mirror and Atomic Layer Deposition-TiO2/Al2O3Distributed Bragg Reflector Backside Reflector with Patterned Sapphire Substrate

2013 ◽  
Vol 6 (2) ◽  
pp. 022101 ◽  
Author(s):  
Hongjun Chen ◽  
Hao Guo ◽  
Peiyuan Zhang ◽  
Xiong Zhang ◽  
Honggang Liu ◽  
...  
2019 ◽  
Vol 9 (7) ◽  
pp. 1415 ◽  
Author(s):  
Yonghua Wu ◽  
Jiali Yang ◽  
Shuanglong Wang ◽  
Zhitian Ling ◽  
Hao Zhang ◽  
...  

White organic light-emitting diodes (WOLEDs) with higher performance, which have enjoyed application in high-quality lighting sources, are here demonstrated with improved optical and electrical properties. The integration of a novel transparent distributed Bragg reflector (DBR), which consists of periodically alternating layers of atomic layer deposition-fabricated ZrO2/Zircone films and sputtered tin-doped indium oxide into OLEDs microcavities were studied to obtain four-peak electroluminescence (EL) spectra. Three types of OLEDs with two-peak, three-peak, and four-peak EL spectra have been developed. The results of the two-peak spectra show that the DBR structures have an outstanding effect on carrier capture; as a result, the device exhibits a stronger stability in color at various applied voltages. The Commission Internationale de L’Eclairage (CIE) coordinates of the two-peak device at 5–13 V shows few displacements and a negligible slight variation of (±0.01, ±0.01). In addition, the four-peak WOLED also yields a high color purity white emission as the luminance changes from 100 cd m−2 to 10,000 cd m−2.


2020 ◽  
Vol 7 (12) ◽  
pp. 2000343 ◽  
Author(s):  
Gi‐Hwan Kim ◽  
Kyeongchan Noh ◽  
Jisu Han ◽  
Minsu Kim ◽  
Nuri Oh ◽  
...  

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