Effect of dopant-induced defects on structural, electrical, and enhanced ferromagnetism and magnetoelectric properties of Dy and Sr co-doped BiFeO3

2019 ◽  
Vol 30 (8) ◽  
pp. 7359-7366 ◽  
Author(s):  
Muniyandi Muneeswaran ◽  
Jae-Won Jang ◽  
Jung Hyun Jeong ◽  
Ali Akbari-Fakhrabadi ◽  
N. V. Giridharan
Keyword(s):  
Magnetoelectric Properties ◽  
Induced Defects ◽  
Co Doped

Surfactant-Induced Defects and Photoluminescence of Co Doped SnO2 Nanorods

2012 ◽  
Vol 12 (4) ◽  
pp. 3108-3114
Author(s):  
He Jiang ◽  
Xiaofang Liu ◽  
Ruihe Tang ◽  
Zhiyu Zou ◽  
Zhangben Wu ◽  
...  
Keyword(s):  
Induced Defects ◽  
Co Doped

Enhanced multiferroic and magnetoelectric properties of Ho, Mn co-doped Bi 5 Ti 3 FeO 15 films

2016 ◽  
Vol 164 ◽  
pp. 618-622 ◽  
Author(s):  
Yulong Bai ◽  
Jieyu Chen ◽  
Ruonan Tian ◽  
Shifeng Zhao
Keyword(s):  
Magnetoelectric Properties ◽  
Co Doped

scholarly journals Increase of magnetic and magnetoelectric properties in Co/Mn co-doped BiFeO3 multiferroic

2020 ◽  
Vol 498 ◽  
pp. 166137 ◽  
Author(s):  
Arij Marzouki ◽  
Vincent Loyau ◽  
Pascale Gemeiner ◽  
Lotfi Bessais ◽  
Brahim Dkhil ◽  
...  
Keyword(s):  
Magnetoelectric Properties ◽  
Co Doped

Structural, electrical, magnetic and magnetoelectric properties of Co-doped BaTiO3 multiferroic ceramics

2018 ◽  
Vol 44 (14) ◽  
pp. 16703-16711 ◽  
Author(s):  
Alka Rani ◽  
Jayant Kolte ◽  
Prakash Gopalan
Keyword(s):  
Magnetoelectric Properties ◽  
Co Doped

scholarly journals Effect analysis and magnetoelectric properties of hydrogen in Co-doped MoSe2 Co-growth

2020 ◽  
Vol 69 (4) ◽  
pp. 048101
Author(s):  
Bao-Jun Zhang ◽  
Fang Wang ◽  
Jia-Qiang Shen ◽  
Xin Shan ◽  
Xi-Chao Di ◽  
...  
Keyword(s):  
Effect Analysis ◽  
Magnetoelectric Properties ◽  
Co Doped

Electrical and Magnetoelectric Properties of Ni–Co Doped BiFeO3 Ceramics

2016 ◽  
Vol 22 (2) ◽  
pp. 363-366 ◽  
Author(s):  
M. R. Biswal ◽  
J. Nanda ◽  
N. C. Mishra ◽  
S. Anwar
Keyword(s):  
Magnetoelectric Properties ◽  
Co Doped

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 92-93
Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Structural Disorder ◽  
Flux Lines ◽  
Pinning Effect ◽  
Magnetic Flux Lines ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

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