Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition

2019 ◽  
Vol 31 (8) ◽  
pp. 5833-5837
Author(s):  
Hao Wang ◽  
Sannian Song ◽  
Zhitang Song ◽  
Zhiguo Zhou ◽  
Dongning Yao ◽  
...  
2020 ◽  
Vol 206 ◽  
pp. 110322 ◽  
Author(s):  
Nuria Navarrete ◽  
Damiano La Zara ◽  
Aristeidis Goulas ◽  
David Valdesueiro ◽  
Leonor Hernández ◽  
...  

RSC Advances ◽  
2019 ◽  
Vol 9 (30) ◽  
pp. 17291-17298 ◽  
Author(s):  
Yewon Kim ◽  
Byeol Han ◽  
Yu-Jin Kim ◽  
Jeeyoon Shin ◽  
Seongyoon Kim ◽  
...  

We studied the atomic layer deposition (ALD) and the tellurization of Ge–Sb films to prepare conformal crystalline Ge–Sb–Te (GST) films and to achieve void-free gap filling for emerging phase-change memory applications.


2016 ◽  
Author(s):  
Sannian Song ◽  
Lanlan Shen ◽  
Zhitang Song ◽  
Dongning Yao ◽  
Tianqi Guo ◽  
...  

2017 ◽  
Vol 10 (6) ◽  
pp. 061101 ◽  
Author(s):  
Brian P. Downey ◽  
Virginia D. Wheeler ◽  
David J. Meyer

2019 ◽  
Vol 25 (4) ◽  
pp. 399-407 ◽  
Author(s):  
Markku Leskelä ◽  
Viljami Pore ◽  
Timo Hatanpää ◽  
Mikko Heikkilä ◽  
Mikko Ritala ◽  
...  

2019 ◽  
Vol 31 (21) ◽  
pp. 8752-8763 ◽  
Author(s):  
Eui-Sang Park ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Manick Ha ◽  
Jeong Woo Jeon ◽  
...  

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