Electrical transport mechanism of aluminum substituted barium hexaferrite magnetic semiconductor

Author(s):  
Alka Singh ◽  
Kumar Mukesh Ranjan ◽  
Sunil Kumar
2021 ◽  
Author(s):  
Banglin Cao ◽  
Zegao Wang ◽  
Xuya Xiong ◽  
Libin Gao ◽  
Jiheng Li ◽  
...  

An improved understanding of the origin of the electrical transport mechanism is of importance to the rational design of the highly performance electronic device. However, the complex interfacial environment and...


2017 ◽  
Vol 52 (9) ◽  
pp. 1700098 ◽  
Author(s):  
Talwinder Kaur ◽  
Jyoti Sharma ◽  
Sachin Kumar ◽  
Ajeet K. Srivastava

2017 ◽  
Vol 122 (22) ◽  
pp. 224106 ◽  
Author(s):  
Sunil Kumar ◽  
Sweety Supriya ◽  
Manoranjan Kar

2021 ◽  
Vol 410 ◽  
pp. 714-719
Author(s):  
Denis Vinnik ◽  
Santhoshkumar Mahadevan ◽  
Puneet Sharma

Magnetic properties of Co, Ni and Zn substituted barium hexaferrite (BaM) samples prepared by solid state ceramic method were studied. Saturation magnetisation were found higher for Zn-substituted BaM, whereas, coercivity is higher for Co2+ and Ni2+ ion substituted samples. Anisotropy field for all substituted samples was calculated by the law of approaching saturation. Remanence, squareness and thermomagnetic plot suggest Zn2+ ions restricts the magnetic interaction of various sites in BaM.


2019 ◽  
Vol 30 (9) ◽  
pp. 8636-8644 ◽  
Author(s):  
Nurshahiera Rosdi ◽  
Raba′ah Syahidah Azis ◽  
Muhammad Syazwan Mustaffa ◽  
Nor Hapishah Abdullah ◽  
Syazana Sulaiman ◽  
...  

Ionics ◽  
2001 ◽  
Vol 7 (1-2) ◽  
pp. 130-137 ◽  
Author(s):  
C. V. Ramana ◽  
B. Srinivasulu Naidu ◽  
O. M. Hussain ◽  
C. Julien

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