Effect of oxygen partial pressure on the behavior of Ga-doped ZnO/p-Si heterojunction diodes fabricated by reactive sputtering

2021 ◽  
Author(s):  
Praloy Mondal ◽  
Shravan K. Appani ◽  
D. S. Sutar ◽  
S. S. Major
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Reactive Sputtering ◽  
Doped Zno ◽  
Heterojunction Diodes ◽  
Effect Of Oxygen

Effect of oxygen partial pressure ratios on the properties of Al–N co-doped ZnO thin films

2005 ◽  
Vol 274 (1-2) ◽  
pp. 178-182 ◽  
Author(s):  
Zhi-zhen Ye ◽  
Qing Qian ◽  
Guo-Dong Yuan ◽  
Bing-Hui Zhao ◽  
De-Wei Ma
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Effect Of Oxygen ◽  
Co Doped

Effect of oxygen partial pressure on the tuning of copper oxide thin films by reactive sputtering for solar light driven photocatalysis

Solar Energy ◽  
2019 ◽  
Vol 187 ◽  
pp. 368-378 ◽  
Author(s):  
S. Sai Guru Srinivasan ◽  
B. Govardhanan ◽  
P. Aabel ◽  
M. Ashok ◽  
M.C. Santhosh Kumar
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Copper Oxide ◽  
Partial Pressure ◽  
Reactive Sputtering ◽  
Solar Light ◽  
Oxide Thin Films ◽  
Effect Of Oxygen

Luminescence properties of Eu doped ZnO PLD thin films: The effect of oxygen partial pressure

2020 ◽  
Vol 139 ◽  
pp. 106432 ◽  
Author(s):  
E.H.H. Hasabeldaim ◽  
O.M. Ntwaeaborwa ◽  
R.E. Kroon ◽  
E. Coetsee ◽  
H.C. Swart
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Luminescence Properties ◽  
Doped Zno ◽  
Effect Of Oxygen

TUNABLE MAGNETIC AND ELECTRICAL PROPERTIES OF Co-DOPED ZnO FILMS BY VARYING OXYGEN PARTIAL PRESSURE

2011 ◽  
Vol 18 (03n04) ◽  
pp. 91-95
Author(s):  
L. G. WANG ◽  
H. W. ZHANG ◽  
X. L. TANG ◽  
Y. X. LI ◽  
Z. Y. ZHONG
Keyword(s):  
Electrical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Electrical Transport ◽  
Vacancy Defect ◽  
Zno Films ◽  
Doped Zno ◽  
Effect Of Oxygen ◽  
Co Doped ◽  
Magnetic And Electrical Properties

High quality Co -doped ZnO films with good reproducibility have been prepared under different oxygen partial pressure by radio-frequency magnetron sputtering. These films were characterized using numerous characterization techniques including X-ray diffraction, electrical transport, and magnetization measurements. The effect of oxygen partial pressure on the structural, magnetic, and electrical properties of Co -doped ZnO films has been systematically studied. It was found that the structural, magnetic, and electrical properties of Co -doped ZnO films are dependent on oxygen partial pressure. The saturated magnetization of Co -doped ZnO films rapidly increases with decreasing oxygen partial pressure, whereas the resistivity decreases with decreasing oxygen partial pressure. Our findings indicate that the magnetic and electrical properties of Co -doped ZnO films can be tuned by careful control of oxygen partial pressure. In addition, it was further demonstrated that the oxygen vacancy defect is absolutely necessary to induce ferromagnetic couplings in Co -doped ZnO films.

Effect of oxygen partial pressure on the local structure and magnetic properties of Co-doped ZnO films

2007 ◽  
Vol 20 (2) ◽  
pp. 025208 ◽  
Author(s):  
Xue-Chao Liu ◽  
Er-Wei Shi ◽  
Zhi-Zhan Chen ◽  
Bo-Yuan Chen ◽  
Tao Zhang ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Local Structure ◽  
Zno Films ◽  
Doped Zno ◽  
Effect Of Oxygen ◽  
Co Doped
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