scholarly journals Reducing the Susceptibility of Lumped-Element KIDs to Two-Level System Effects

2020 ◽  
Vol 200 (5-6) ◽  
pp. 239-246
Author(s):  
A. L. Hornsby ◽  
P. S. Barry ◽  
S. M. Doyle ◽  
Q. Y. Tang ◽  
E. Shirokoff

Abstract Arrays of lumped-element kinetic inductance detectors (LEKIDs) optically coupled through an antenna-coupled transmission line are a promising candidate for future cosmic microwave background experiments. However, the dielectric materials used for the microstrip architecture are known to degrade the performance of superconducting resonators. In this paper, we investigate the feasibility of microstrip coupling to a LEKID, focusing on a systematic study of the effect of depositing amorphous silicon nitride on a LEKID. The discrete and spatially separated inductive and capacitive regions of the LEKID allow us to vary the degree of dielectric coverage and determine the limitations of the microstrip coupling architecture. We show that by careful removal of dielectric from regions of high electric field in the capacitor, there is minimal degradation in dielectric loss tangent of a partially covered lumped-element resonator. We present the effects on the resonant frequency and noise power spectral density and, using the dark responsivity, provide an estimate for the resulting detector sensitivity.

2020 ◽  
Vol 641 ◽  
pp. A179 ◽  
Author(s):  
A. Catalano ◽  
A. Bideaud ◽  
O. Bourrion ◽  
M. Calvo ◽  
A. Fasano ◽  
...  

We report the design, fabrication, and testing of lumped element kinetic inductance detectors (LEKID) showing performance in line with the requirements of the next generation space telescopes operating in the spectral range from 80 GHz to 600 GHz. This range is of particular interest for cosmic microwave background studies. For this purpose we designed and fabricated 100 pixel arrays covering five distinct bands. These wafers were measured via multiplexing, in which a full array is read out using a single pair of lines. We adopted a custom cold black body installed in front of the detectors and regulated at temperatures between 1 K and 20 K. In this paper, we describe in the main design considerations, fabrication processes, testing and data analysis.


2019 ◽  
Vol 199 (3-4) ◽  
pp. 994-1003
Author(s):  
Faouzi Boussaha ◽  
Samir Beldi ◽  
Alessandro Monfardini ◽  
Jie Hu ◽  
Martino Calvo ◽  
...  

2016 ◽  
Vol 184 (1-2) ◽  
pp. 97-102 ◽  
Author(s):  
A. Paiella ◽  
A. Coppolecchia ◽  
M. G. Castellano ◽  
I. Colantoni ◽  
A. Cruciani ◽  
...  

2018 ◽  
Vol 193 (3-4) ◽  
pp. 157-162
Author(s):  
A. Gomez ◽  
M. Calvo ◽  
J. Goupy ◽  
A. Bideaud ◽  
F. Lévy-Bertrand ◽  
...  

2014 ◽  
Vol 24 (01) ◽  
pp. 1550010 ◽  
Author(s):  
Jack Ou ◽  
Pietro M. Ferreira

We present an unified explanation of the transconductance-to-drain current (gm/ID)-based noise analysis in this paper. We show that both thermal noise coefficient (γ) and device noise corner frequency (f co ) are dependent on the gm/ID of a transistor. We derive expressions to demonstrate the relationship between the normalized noise power spectral density technique and the technique based on γ and f co . We conclude this letter with examples to demonstrate the practical implication of our study. Our results show that while both techniques discussed in this letter can be used to compute noise numerically, using γ and f co to separate thermal noise from flicker noise provides additional insight for optimizing noise.


2016 ◽  
Vol 87 (3) ◽  
pp. 033105 ◽  
Author(s):  
Sam Rowe ◽  
Enzo Pascale ◽  
Simon Doyle ◽  
Chris Dunscombe ◽  
Peter Hargrave ◽  
...  

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