scholarly journals An HDG Method for the Time-dependent Drift–Diffusion Model of Semiconductor Devices

2019 ◽  
Vol 80 (1) ◽  
pp. 420-443 ◽  
Author(s):  
Gang Chen ◽  
Peter Monk ◽  
Yangwen Zhang
VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 301-305 ◽  
Author(s):  
D. Vasileska ◽  
W. J. Gross ◽  
V. Kafedziski ◽  
D. K. Ferry

As semiconductor technology continues to evolve, numerical modeling of semiconductor devices becomes an indispensible tool for the prediction of device characteristics. The simple drift-diffusion model is still widely used, especially in the study of subthreshold behavior in MOSFETs. The numerical solution of these two equations offers difficulties in small devices and special methods are required for the case when dealing with 3D problems that demand large CPU times. In this work we investigate the convergence properties of the Bi-CGSTAB method. We find that this method shows superior convergence properties when compared to more commonly used ILU and SIP methods.


Author(s):  
Joshua Calder-Travis ◽  
Rafal Bogacz ◽  
Nick Yeung

AbstractMuch work has explored the possibility that the drift diffusion model, a model of response times and choices, could be extended to account for confidence reports. Many methods for making predictions from such models exist, although these methods either assume that stimuli are static over the course of a trial, or are computationally expensive, making it difficult to capitalise on trial-by-trial variability in dynamic stimuli. Using the framework of the drift diffusion model with time-dependent thresholds, and the idea of a Bayesian confidence readout, we derive expressions for the probability distribution over confidence reports. In line with current models of confidence, the derivations allow for the accumulation of “pipeline” evidence which has been received but not processed by the time of response, the effect of drift rate variability, and metacognitive noise. The expressions are valid for stimuli which change over the course of a trial with normally distributed fluctuations in the evidence they provide. A number of approximations are made to arrive at the final expressions, and we test all approximations via simulation. The derived expressions only contain a small number of standard functions, and only require evaluating once per trial, making trial-by-trial modelling of confidence data in dynamic stimuli tasks more feasible. We conclude by using the expressions to gain insight into the confidence of optimal observers, and empirically observed patterns.


1994 ◽  
Vol 04 (03) ◽  
pp. 439-453 ◽  
Author(s):  
CHRISTIAN SCHMEISER

A stationary version of the standard drift-diffusion model for the flow of electrons and holes in semiconductor devices is considered. The boundary conditions are, to a certain extent, capable of describing the influence of the surrounding electrical circuit as opposed to the usual mathematical assumption of prescribed voltages. The existence of solutions and the convergence close to thermal equilibrium of a decoupled iteration method are proved.


2001 ◽  
Vol 11 (05) ◽  
pp. 827-840 ◽  
Author(s):  
WEIFU FANG ◽  
KAZUFUMI ITO

We analyze a mathematical model for semiconductors derived from the hydrodynamic model under the massless assumption. This model augments the classical drift-diffusion model by including temperature as a dependent variable. We establish the existence of stationary solutions near the equilibrium state.


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