Characterization of very low thermal conductivity thin films

2013 ◽  
Vol 115 (2) ◽  
pp. 1541-1550 ◽  
Author(s):  
M. T. Alam ◽  
S. King ◽  
M. A. Haque
Carbon ◽  
1994 ◽  
Vol 32 (3) ◽  
pp. 379-391 ◽  
Author(s):  
H.A. Katzman ◽  
P.M. Adams ◽  
T.D. Le ◽  
C.S. Hemminger

2009 ◽  
Vol 38 (7) ◽  
pp. 1402-1406 ◽  
Author(s):  
Paul Zschack ◽  
Colby Heideman ◽  
Clay Mortensen ◽  
Ngoc Nguyen ◽  
Mary Smeller ◽  
...  

2013 ◽  
Vol 44 (11) ◽  
pp. 1029-1034 ◽  
Author(s):  
Séverine Gomès ◽  
Pascal Newby ◽  
Bruno Canut ◽  
Konstantinos Termentzidis ◽  
Olivier Marty ◽  
...  

2020 ◽  
Author(s):  
Jimmy Thörnberg ◽  
Justinas Palisaitis ◽  
Niklas Hellgren ◽  
Fedor Klimashin ◽  
Naureen Ghafoor ◽  
...  

<p>In the present research article we report synthesis of TiB<sub>x</sub>, 1.43<i>n-situ</i> mass- and energy-spectroscopy is used to explain the obtained compositional range. Excess B in overstoichiometric TiB<i><sub>x</sub></i><sub> </sub>thin films from DCMS results in a hardness up to 37.7±0.8 GPa, attributed to the formation of an amorphous B-rich tissue phase separating stoichiometric TiB<sub>2</sub> columnar structures. With a particular focus on characterization of the understoichiometric samples, we show that understoichiometric TiB<sub>1.43</sub> thin films synthesized by HiPIMS exhibit a superior hardness of 43.9±0.9 GPa, where the deficiency of B is found to be accommodated by Ti planar defects. The apparent fracture toughness, electrical resistivity and thermal conductivity of the same sample is 4.2±0.1 MPa√m, 367±7 μΩ·cm and 5.1 W/(m.K), respectively, as compared to corresponding values for overstoichiometric TiB<sub>2.20</sub> DCMS thin film samples of 3.2±0.1 MPa√m, 309±4 μΩ·cm and 3.0 W/(m.K). </p>


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