Sensitivity and Spatial Resolution for Thermal Conductivity Measurements using Non-contact Scanning Thermal Microscopy with Thermoresistive Probes under Ambient Conditions

Thermoresistive probes are increasingly popular in thermal conductivity characterization using Scanning Thermal Microscopy (SThM). A systematic analysis of the thermal conductivity measurement performance (sensitivity and spatial resolution) of thermoresistive SThM probe configurations that are available commercially is of interest to practitioners. In this work, the authors developed and validated 3-Dimensional Finite Element Models (3DFEM) of non-contact SThM with self-heated thermoresistive probes under ambient conditions with the probe-sample heat transfer in transition heat conduction regime for the four types of SThM probe configurations resembling commercially available products: Wollaston wire (WW) type probe, Kelvin Nanotechnology (KNT) type probe, Doped Silicon (DS) type probe, and Nanowire (NW) type probe. These models were then used to investigate the sensitivity and spatial resolution of the WW, KNT, DS and NW type probes for thermal conductivity measurements in non-contact mode in ambient conditions. The comparison of the SThM probes performance for measuring sample thermal conductivity and for the specific operating conditions investigated here show that the NW type probe has the best spatial resolution while the DS type probe has the best thermal conductivity measurement sensitivity in the range between 2-10 W·m−1·K−1. The spatial resolution is negatively affected by large probe diameters or by the presence of the cantilever in close proximity to the sample surface which strongly affects the probe-sample heat transfer in ambient conditions. An example of probe geometry configuration optimization was illustrated for the WW probe by investigating the effect of probe wire diameter on the thermal conductivity measurement sensitivity, showing ∼20% improvement in spatial resolution at the diameter with maximum thermal conductivity measurement sensitivity.

Scanning Thermal Microscopy of Ultrathin Films: Numerical Studies Regarding Cantilever Displacement, Thermal Contact Areas, Heat Fluxes, and Heat Distribution

New micro- and nanoscale devices require electrically isolating materials with specific thermal properties. One option to characterize these thermal properties is the atomic force microscopy (AFM)-based scanning thermal microscopy (SThM) technique. It enables qualitative mapping of local thermal conductivities of ultrathin films. To fully understand and correctly interpret the results of practical SThM measurements, it is essential to have detailed knowledge about the heat transfer process between the probe and the sample. However, little can be found in the literature so far. Therefore, this work focuses on theoretical SThM studies of ultrathin films with anisotropic thermal properties such as hexagonal boron nitride (h-BN) and compares the results with a bulk silicon (Si) sample. Energy fluxes from the probe to the sample between 0.6 µW and 126.8 µW are found for different cases with a tip radius of approximately 300 nm. A present thermal interface resistance (TIR) between bulk Si and ultrathin h-BN on top can fully suppress a further heat penetration. The time until heat propagation within the sample is stationary is found to be below 1 µs, which may justify higher tip velocities in practical SThM investigations of up to 20 µms−1. It is also demonstrated that there is almost no influence of convection and radiation, whereas a possible TIR between probe and sample must be considered.