Observation of nonlinear optical phenomenon in vacuum by four waves mixing

Abstract In the present paper, we studied possibility of observation and detection of nonlinear optical effects in free space. We studied four wave mixing process in which signal is generated opposite to the direction of probe beam. We observed that large number of photons are generated in signal beam, which should be detectable.

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Raman investigation of the nonlinear optical phenomenon of polarization rotation in Ti:LiNbO3channel waveguides

Journal of Applied Physics ◽

10.1063/1.354848 ◽

1993 ◽

Vol 74 (3) ◽

pp. 1492-1500 ◽

Cited By ~ 14

Author(s):

Uma B. Ramabadran ◽

Howard E. Jackson ◽

Joseph T. Boyd

Keyword(s):

Nonlinear Optical ◽

Polarization Rotation ◽

Optical Phenomenon ◽

Nonlinear Optical Phenomenon

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New Self-Defocusing Materials: Synthesis, Structures and Nonlinear Optical Properties of Nest Shaped Clusters

MRS Proceedings ◽

10.1557/proc-374-311 ◽

1994 ◽

Vol 374 ◽

Cited By ~ 1

Author(s):

S. Shi ◽

X. Q. Xin ◽

W. Ji ◽

W. Xie

Keyword(s):

Nonlinear Optical ◽

Profile Analysis ◽

Laser Pulses ◽

Solid State Reactions ◽

Transmission Measurement ◽

Materials Synthesis ◽

Third Order ◽

Optical Phenomenon ◽

532 Nm ◽

Mixed Metal Clusters

AbstractMixed metal clusters (n-Bu4N)2[MoCu3OS3X3] (X = SCN, Cl and Br) were synthesized by solid state reactions. X-ray single crystal diffraction data show that the anionic clusters assume nest shaped structures. The clusters exhibit large self-defocusing effect as demonstrated by their Z-scan traces. The effective third-order polarizability of |γ| = 4.8 × 10−29 esu was determined for (n-Bu4N)2[MoCu3OS3(SCN)3] by a degenerate four-wave mixing technique with 7-ns laser pulses of 532 nm wavelength. An irradiance-dependent transmission measurement was conducted to assess the contribution of nonlinear absorption to the γ-value. These results in combination with the self-defocusing property of the cluster yielded a negative value for the real part of γ, Reγ = − 4.8 × 10−29 esu. These numerical values are in good agreement with those obtained in a Z-scan experiment. Even though the clusters absorb laser light at 532 nm significantly, the results of temporal profile analysis on transmitted pulses show that the solvent thermal effect makes little contribution to the observed nonlinear optical phenomenon.

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High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics

Light Science & Applications ◽

10.1038/s41377-021-00584-9 ◽

2021 ◽

Vol 10 (1) ◽

Author(s):

Chengli Wang ◽

Zhiwei Fang ◽

Ailun Yi ◽

Bingcheng Yang ◽

Zhe Wang ◽

...

Keyword(s):

Silicon Carbide ◽

Extreme Environment ◽

Optical Phenomenon ◽

Frequency Combs ◽

High Q ◽

Integrated Devices ◽

Raman Lasing ◽

First Time ◽

Significant Milestone ◽

Nonlinear Optical Phenomenon

AbstractThe realization of high-quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies. Here, photonic microresonators with a mean Q factor of 6.75 × 106 were demonstrated on a 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, as determined by a statistical analysis of tens of resonances. Using these devices, broadband frequency conversions, including second-, third-, and fourth-harmonic generations have been observed. Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time, to the best of our knowledge. Meanwhile, by engineering the dispersion properties of the SiC microresonator, we have achieved broadband Kerr frequency combs covering from 1300 to 1700 nm. Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.

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Roughness measurements of nonlinear optical polymer films by scanning tunneling microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100152082 ◽

1989 ◽

Vol 47 ◽

pp. 22-23

Author(s):

I. H. Musselman ◽

R.-T. Chen ◽

P. E. Russell

Keyword(s):

Surface Roughness ◽

Scanning Tunneling Microscopy ◽

Nonlinear Optical ◽

Polymer Surface ◽

Light Extinction ◽

Scanning Tunneling ◽

Silicon Substrates ◽

Tunneling Microscopy ◽

Optical Polymer ◽

Total Light

Scanning tunneling microscopy (STM) has been used to characterize the surface roughness of nonlinear optical (NLO) polymers. A review of STM of polymer surfaces is included in this volume. The NLO polymers are instrumental in the development of electrooptical waveguide devices, the most fundamental of which is the modulator. The most common modulator design is the Mach Zehnder interferometer, in which the input light is split into two legs and then recombined into a common output within the two dimensional waveguide. A π phase retardation, resulting in total light extinction at the output of the interferometer, can be achieved by changing the refractive index of one leg with respect to the other using the electrooptic effect. For best device performance, it is essential that the NLO polymer exhibit minimal surface roughness in order to reduce light scattering. Scanning tunneling microscopy, with its high lateral and vertical resolution, is capable of quantifying the NLO polymer surface roughness induced by processing. Results are presented below in which STM was used to measure the surface roughness of films produced by spin-coating NLO-active polymers onto silicon substrates.

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