scholarly journals High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Chengli Wang ◽  
Zhiwei Fang ◽  
Ailun Yi ◽  
Bingcheng Yang ◽  
Zhe Wang ◽  
...  

AbstractThe realization of high-quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies. Here, photonic microresonators with a mean Q factor of 6.75 × 106 were demonstrated on a 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, as determined by a statistical analysis of tens of resonances. Using these devices, broadband frequency conversions, including second-, third-, and fourth-harmonic generations have been observed. Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time, to the best of our knowledge. Meanwhile, by engineering the dispersion properties of the SiC microresonator, we have achieved broadband Kerr frequency combs covering from 1300 to 1700 nm. Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.

2018 ◽  
Vol 113 (23) ◽  
pp. 231106 ◽  
Author(s):  
Bong-Shik Song ◽  
Seungwoo Jeon ◽  
Heungjoon Kim ◽  
Dongyeon Daniel Kang ◽  
Takashi Asano ◽  
...  

RSC Advances ◽  
2018 ◽  
Vol 8 (6) ◽  
pp. 3009-3013 ◽  
Author(s):  
Tuan-Khoa Nguyen ◽  
Hoang-Phuong Phan ◽  
Jisheng Han ◽  
Toan Dinh ◽  
Abu Riduan Md Foisal ◽  
...  

This paper presents for the first time a p-type 4H silicon carbide (4H-SiC) van der Pauw strain sensor by utilizing the strain induced effect in four-terminal devices.


Author(s):  
Walter S. Wall ◽  
Randy L. Kubena ◽  
Yook-Kong Yook ◽  
Joseph Koehl ◽  
Rick J. Joyce
Keyword(s):  

2014 ◽  
Vol 778-780 ◽  
pp. 767-770 ◽  
Author(s):  
Norimasa Yamamoto ◽  
Satarou Yamaguchi ◽  
Tomohisa Kato

Recently, ingots of silicon carbide have been adapted to be sliced by the wire-cut electrical discharge machining. Fast slicing, and the reduction in the loss are important for slicing of the wafer. In this paper, characteristic features of the electric discharge machining in the ion-exchange water and the fluorine-based fluid were compared for these improvement. The discharge was caused by a pulse voltage applied to a ingot of silicon carbide and the wire in machining fluid, and the slicing was proceeded. As a result, improvement of surface roughness and kerf loss was confirmed, for the first time. In addition, the improving methods for fast slicing were considered.


Sensors ◽  
2020 ◽  
Vol 20 (16) ◽  
pp. 4374
Author(s):  
Alberto Signoroni ◽  
Mauro Conte ◽  
Alice Plutino ◽  
Alessandro Rizzi

Glare is an unwanted optical phenomenon which affects imaging systems with optics. This paper presents for the first time a set of hyperspectral image (HSI) acquisitions and measurements to verify how glare affects acquired HSI data in standard conditions. We acquired two ColorCheckers (CCs) in three different lighting conditions, with different backgrounds, different exposure times, and different orientations. The reflectance spectra obtained from the imaging system have been compared to pointwise reference measures obtained with contact spectrophotometers. To assess and identify the influence of glare, we present the Glare Effect (GE) index, which compares the contrast of the grayscale patches of the CC in the hyperspectral images with the contrast of the reference spectra of the same patches. We evaluate, in both spatial and spectral domains, the amount of glare affecting every hyperspectral image in each acquisition scenario, clearly evidencing an unwanted light contribution to the reflectance spectra of each point, which increases especially for darker pixels and pixels close to light sources or bright patches.


2012 ◽  
Vol 1433 ◽  
Author(s):  
Dirk Lewke ◽  
Matthias Koitzsch ◽  
Martin Schellenberger ◽  
Lothar Pfitzner ◽  
Heiner Ryssel ◽  
...  

ABSTRACTThis paper presents Thermal Laser Separation (TLS) as a novel dicing technology for silicon carbide (SiC) wafers. Results of this work will play an important role in improving the SiC dicing process regarding throughput and edge quality. TLS process parameters were developed for separating 4H-SiC wafers. Separated SiC dies were analyzed and compared with results produced with current state of the art blade dicing technology. For the first time, fully processed 100 mm 4H-SiC wafers with a thickness of 450 μm, including epi-layer and back side metal layers, could be separated with feed rates up to 200 mm/s. Besides the vastly improved dicing speed, the TLS separation process results in two important features of the separated SiC devices: First, edges are free of chipping and therefore of higher quality than the edges produced by blade dicing. Second, the TLS process is kerf free, which allows for reducing the necessary dicing street width and hence increasing the number of devices per wafer.


2020 ◽  
Vol 2 (101) ◽  
pp. 57-62
Author(s):  
T.M. Kovbasiuk ◽  
V.Yu. Selivorstov ◽  
Yu.V. Dotsenko ◽  
Z.A. Duriagina ◽  
V.V. Kulyk ◽  
...  

Purpose: Determine the possibility of modifying aluminium alloys of the Al-Si system with an ultrafine SiC modifier with a particle size of 3-5 μm. Design/methodology/approach: Processing of the Al-Si alloy was carried out by introducing an ultrafine modifier in the amount of 0.1, 0.2, or 0.3 wt.%. Silicon carbide (SiC) with a particle size in the range of 3-5 μm was used as a modifier. To study the microstructure of the formed surface layers, a metallographic analysis was performed according to the standard method on a microscope MIKPOTEX® MMT-14C using TopView software. Microhardness studies of the samples were carried out on a Vickers microhardness tester NOVOTEST TC-MKV1. The microstructure of castings of the AlSi12 grade was studied at magnification from 100 to 400 times on the horizontal and vertical surfaces of the samples after etching with a 2% NaOH aqueous solution. Findings: Aluminium cast alloy of Al-Si system has been synthesized with the addition of 0.1, 0.2, and 0.3 wt.% ultrafine SiC modifier. It was found that the modification of the AlSi12 alloy by SiC particles of 3-5 μm in size led to an improvement of its microstructure due to the reduction of the volume fraction of micropores and primary Si crystals. It was shown that the AlSi12 aluminium alloy due to the modification by 0.2 wt.% SiC has the best micromechanical properties and macrostructure density. Research limitations/implications: The obtained research results are relevant for cast specimens of the indicated sizes and shapes. The studies did not take into account the influence of the scale factor of the castings. Practical implications: The developed modification technology was recommended for use in the conditions of the foundry "Dnipropetrovsk Aggregate Plant" (Dnipro, Ukraine). Originality/value: The technology of AlSi12 alloy modification of ultrafine SIC modifier with a particle size of 3-5 μm was used for the first time.


2009 ◽  
Vol 71-73 ◽  
pp. 101-104 ◽  
Author(s):  
M. Patel ◽  
D.R. Tipre ◽  
Shailesh R. Dave

Microbial diversity studies of lignite mines of Rajpardi, Amod, Tadkeshwar and Panandhro, Gujarat, India, were carried out by substrate utilization-based, community-structure analysis. In Biologâ EcoPlates out of 31 different substrates, 1 to 28 substrates were metabolized. On the basis of these, similarity index and diversity indices were studied. From an extreme mine site Gram-positive, Gram-negative, fungi and yeasts were isolated and identified. One of the yeasts isolated is for the first time reported from a lignite mine ecosystem Apart from this auto- and heterotrophic iron oxidizers; sulphur oxidizers and sulphate reducers were also isolated. So, lignite mine ecosystems, inspite of the extreme environment showed rich microbial diversity.


2014 ◽  
Vol 22 (25) ◽  
pp. 30826 ◽  
Author(s):  
Xiyuan Lu ◽  
Jonathan Y. Lee ◽  
Steven Rogers ◽  
Qiang Lin

2013 ◽  
Vol 38 (23) ◽  
pp. 4966 ◽  
Author(s):  
Francis Vanier ◽  
Martin Rochette ◽  
Nicolas Godbout ◽  
Yves-Alain Peter

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