scholarly journals Extracellular ATP and β-NAD alter electrical properties and cholinergic effects in the rat heart in age-specific manner

2019 ◽  
Vol 15 (1) ◽  
pp. 107-117 ◽  
Author(s):  
Ksenia B. Pustovit ◽  
Viktoria M. Potekhina ◽  
Alexandra D. Ivanova ◽  
Alexey M. Petrov ◽  
Denis V. Abramochkin ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Rat Heart ◽  
Extracellular Atp ◽  
Specific Manner ◽  
Cholinergic Effects

scholarly journals Effect of calcium on the dissociation of the mature rat heart into individual and paired myocytes: electrical properties of cell pairs.

1986 ◽  
Vol 59 (2) ◽  
pp. 143-150 ◽  
Author(s):  
B A Wittenberg ◽  
R L White ◽  
R D Ginzberg ◽  
D C Spray
Keyword(s):  
Electrical Properties ◽  
Rat Heart

scholarly journals Accumulation of extracellular ATP protects against acute reperfusion injury in rat heart endothelial cells☆

2006 ◽  
Vol 71 (4) ◽  
pp. 764-773 ◽  
Author(s):  
D GUNDUZ ◽  
S KASSECKERT ◽  
F HARTEL ◽  
M ASLAM ◽  
Y ABDALLAH ◽  
...  
Keyword(s):  
Endothelial Cells ◽  
Reperfusion Injury ◽  
Rat Heart ◽  
Extracellular Atp

Disassociation Between Left Ventricular Mechanical and Electrical Properties in Ischemic Rat Heart After G-CSF Treatment

2011 ◽  
Vol 25 (3) ◽  
pp. 203-214 ◽  
Author(s):  
Hong-Mei Liu ◽  
Tao Luo ◽  
Xin Zhou ◽  
Lin Cai ◽  
Ti-Gang Huang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Rat Heart ◽  
Left Ventricular ◽  
Mechanical And Electrical Properties

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

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