Resistive switching behavior of Ag/Mg0.2Zn0.8O/ZnMn2O4/p+-Si heterostructure devices for nonvolatile memory applications

2017 ◽  
Vol 32 (1) ◽  
pp. 29-32 ◽  
Author(s):  
Changcheng Wei ◽  
Hua Wang ◽  
Jiwen Xu ◽  
Yupei Zhang ◽  
Xiaowen Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Memory Applications ◽  
Heterostructure Devices

Bipolar resistive switching behavior of La0.5Sr0.5CoO3−σ films for nonvolatile memory applications

2014 ◽  
Vol 104 (22) ◽  
pp. 223505 ◽  
Author(s):  
Y. J. Fu ◽  
F. J. Xia ◽  
Y. L. Jia ◽  
C. J. Jia ◽  
J. Y. Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Memory Applications

Bipolar Resistive Switching Behavior of a Pt/NiO/TiN Device for Nonvolatile Memory Applications

2012 ◽  
Vol 51 ◽  
pp. 041102 ◽  
Author(s):  
Tae-Geun Seong ◽  
Mi-Ri Joung ◽  
Jong-Woo Sun ◽  
Min Kyu Yang ◽  
Jeon-Kook Lee ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Memory Applications

Bipolar Resistive Switching Behavior of a Pt/NiO/TiN Device for Nonvolatile Memory Applications

2012 ◽  
Vol 51 (4R) ◽  
pp. 041102 ◽  
Author(s):  
Tae-Geun Seong ◽  
Mi-Ri Joung ◽  
Jong-Woo Sun ◽  
Min Kyu Yang ◽  
Jeon-Kook Lee ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Memory Applications

Resistive switching behavior of La-doped ZnO films for nonvolatile memory applications

2011 ◽  
Vol 63 (1) ◽  
pp. 100-104 ◽  
Author(s):  
M.H. Tang ◽  
Z.Q. Zeng ◽  
J.C. Li ◽  
Z.P. Wang ◽  
X.L. Xu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Behavior ◽  
Zno Films ◽  
Resistive Switching Behavior ◽  
Doped Zno ◽  
Memory Applications ◽  
La Doped

scholarly journals Study of the Influence of the Dielectric Composition of Al/Ti/ZrO2:Al2O3/TiN/Si/Al Structures on the Resistive Switching Behavior for Memory Applications

2018 ◽  
Vol 85 (8) ◽  
pp. 143-148
Author(s):  
Helena Castán ◽  
Salvador Dueñas ◽  
Kaupo Kukli ◽  
Marianna Kemell ◽  
Mikko Ritala ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Memory Applications
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